Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

F Pan, S Gao, C Chen, C Song, F Zeng - Materials Science and …, 2014 - Elsevier
This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

Nanoelectronics Using Metal–Insulator Transition

YJ Lee, Y Kim, H Gim, K Hong, HW Jang - Advanced Materials, 2024 - Wiley Online Library
Metal–insulator transition (MIT) coupled with an ultrafast, significant, and reversible resistive
change in Mott insulators has attracted tremendous interest for investigation into next …

Néel-type skyrmion lattice with confined orientation in the polar magnetic semiconductor GaV4S8

I Kézsmárki, S Bordács, P Milde, E Neuber, LM Eng… - Nature materials, 2015 - nature.com
Following the early prediction of the skyrmion lattice (SkL)—a periodic array of spin vortices—
it has been observed recently in various magnetic crystals mostly with chiral structure …

Chemistry of quantum spin liquids

JR Chamorro, TM McQueen, TT Tran - Chemical Reviews, 2020 - ACS Publications
Quantum spin liquids are an exciting playground for exotic physical phenomena and
emergent many-body quantum states. The realization and discovery of quantum spin liquid …

A review on quantum dot sensitized solar cells: Past, present and future towards carrier multiplication with a possibility for higher efficiency

A Sahu, A Garg, A Dixit - Solar Energy, 2020 - Elsevier
Abstract Quantum Dot Sensitized Solar Cells are considered as the potential third
generation solar cells due to their suitable optoelectronic properties for photovoltaic …

A leaky‐integrate‐and‐fire neuron analog realized with a Mott insulator

P Stoliar, J Tranchant, B Corraze… - Advanced Functional …, 2017 - Wiley Online Library
During the last half century, the tremendous development of computers based on von
Neumann architecture has led to the revolution of the information technology. However, von …

Experimental signatures of quantum and topological states in frustrated magnetism

J Khatua, B Sana, A Zorko, M Gomilšek, K Sethupathi… - Physics Reports, 2023 - Elsevier
Frustration in magnetic materials arising from competing exchange interactions can prevent
the system from adopting long-range magnetic order and can instead lead to a diverse …

Resistive switching in Mott insulators and correlated systems

E Janod, J Tranchant, B Corraze… - Advanced Functional …, 2015 - Wiley Online Library
Resistive random access memories (ReRAM) form an emerging type of non‐volatile
memories, based on an electrically driven resistive switching (RS) of an active material. This …

Multiferroicity and skyrmions carrying electric polarization in GaV4S8

E Ruff, S Widmann, P Lunkenheimer, V Tsurkan… - Science …, 2015 - science.org
Skyrmions are whirl-like topological spin objects with high potential for future magnetic data
storage. A fundamental question that is relevant to both basic research and application is …

Universal electric-field-driven resistive transition in narrow-gap Mott insulators

P Stoliar, L Cario, E Janod, B Corraze… - arXiv preprint arXiv …, 2013 - arxiv.org
One of today's most exciting research frontier and challenge in condensed matter physics is
known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of …