Highly efficient and atomic scale polishing of GaN via plasma-based atom-selective etching
Plasma-based atom-selective etching (PASE) of GaN is conducted to realize the highly
efficient planarization of the GaN surface. Inductively coupled plasma with high temperature …
efficient planarization of the GaN surface. Inductively coupled plasma with high temperature …
[HTML][HTML] Novel type of whisker-tip cantilever based on GaN microrods for atomic force microscopy
E Gacka, P Kunicki, P Łysik, K Gajewski… - Ultramicroscopy, 2023 - Elsevier
High-resolution scanning probe microscopy (SPM) is a fundamental and efficient technology
for surface characterization of modern materials at the subnanometre scale. The bottleneck …
for surface characterization of modern materials at the subnanometre scale. The bottleneck …
[HTML][HTML] Effect of oxidation temperature on physical properties of polycrystalline β-Ga2O3 grown by thermal oxidation of GaN in O2 ambient from 900 to 1400° C
Q Shi, S Wei, F Shi, T Chen, M Zhao, M Lee - Journal of Materials Research …, 2024 - Elsevier
This study aimed to investigate the effect of oxidation temperature on the physical properties
of β-Ga 2 O 3 grown by thermal oxidation of GaN in the O 2 ambient at high oxidation …
of β-Ga 2 O 3 grown by thermal oxidation of GaN in the O 2 ambient at high oxidation …
[HTML][HTML] Growth of p-type GaN–The role of oxygen in activation of Mg-doping
The effects of N 2 and O 2: N 2 (1: 1) as ambient gases during activation annealing of Mg as
p-type doping of GaN have been investigated. The purpose was to understand the …
p-type doping of GaN have been investigated. The purpose was to understand the …
New oxide structures clearing up the origin of two-dimensional electron gas in AlGaN/GaN heterostructures
Z Wang, W Yi, Y Cao, M Miao, J Liu - The Journal of Chemical Physics, 2023 - pubs.aip.org
Control over the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures is
crucial for their practical applications in current semiconducting devices. However, the oxide …
crucial for their practical applications in current semiconducting devices. However, the oxide …
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
Here, we investigate the effects of O 2: N 2 (1: 1) as ambient gas as compared with pure N 2
during activation annealing of Mg as p-type doping in GaN layers grown by MOCVD. The …
during activation annealing of Mg as p-type doping in GaN layers grown by MOCVD. The …