Silicon photonics is widely used for near InfraRed (IR) applications up to 1.6 µm. It plays a
key role in short-range optical data communications. However, silicon photonics does not …

In this paper, we review the last 10 years studies related to Ni-based metallization of GeSn
layers. We also introduce the recent achievements obtained at CEA-Leti. First, we present …

The prospect of GeSn semiconductors for silicon-integrated infrared optoelectronics brings
new challenges related to the metastability of this class of materials. As a matter of fact …

Silicon photonics in the near-IR, up to 1.6 µm, is already one of key technologies in optical
data communications, particularly short range. It also is being prospected for applications in …

We investigate the recrystallization of thick phosphorus-implanted GeSn layers using 308
nm Ultraviolet Nanosecond Laser Annealing (UV-NLA). We identify the optimal annealing …

In this study, we have conclusively used UV-nanosecond laser annealing (UV-NLA) as an
alternative to classical rapid thermal annealing (RTA) for the formation of stable Ni-GeSn …

The reconstruction of thick GeSn crystalline layers implanted with phosphorus is explored.
Our study demonstrates (i) the potential for recrystallizing amorphized GeSn crystal under …

Based on the transport equation of the semiconductor device model for 0.524 eV GeSn alloy
and the experimental parameters of the material, the thermal–electricity conversion …

GeSn alloys are very promising materials for Si-based photonics and CMOS technologies.
Performant contacts are definitely needed to make the most of innovative Mid Infra-Red …

Abstract (EN) Within the framework of this thesis, the influence of non equilibrium post
growth thermal treatments of ion implanted and epitaxially grown Ge1-xSnx and Si1-x …