Advances in fabrication, physio-chemical properties, and sensing applications of non-metal boron nitride and boron carbon nitride-based nanomaterials
Boron carbon nitride (BCN) and boron nitride (BN), semiconductor nanomaterials with high
versatility, have attracted attention because of their mechanical toughness, thermal …
versatility, have attracted attention because of their mechanical toughness, thermal …
Mechanisms of thermal quenching of defect‐related luminescence in semiconductors
MA Reshchikov - physica status solidi (a), 2021 - Wiley Online Library
The intensity of defect‐related photoluminescence (PL) in semiconductors changes with
temperature, and it usually decreases exponentially above some critical temperature, a …
temperature, and it usually decreases exponentially above some critical temperature, a …
[HTML][HTML] Measurement and analysis of photoluminescence in GaN
MA Reshchikov - Journal of applied physics, 2021 - pubs.aip.org
Photoluminescence (PL) spectroscopy is a powerful tool in studying semiconductor
properties and identifying point defects. Gallium nitride (GaN) is a remarkable …
properties and identifying point defects. Gallium nitride (GaN) is a remarkable …
Recombination of free and bound excitons in GaN
B Monemar, PP Paskov, JP Bergman… - … status solidi (b), 2008 - Wiley Online Library
We report on recent optical investigations of free and bound exciton properties in bulk GaN.
In order to obtain reliable data it is important to use low defect density samples of low …
In order to obtain reliable data it is important to use low defect density samples of low …
Carrier dynamics in bulk GaN
Carrier dynamics in hydride vapor phase epitaxy grown bulk GaN with very low density of
dislocations, 5–8× 10 5 cm− 2, have been investigated by time-resolved photoluminescence …
dislocations, 5–8× 10 5 cm− 2, have been investigated by time-resolved photoluminescence …
Mixed phase ZnSnN2 thin films for solar energy applications: Insight into optical and electrical properties
A Nezhdanov, A Skrylev, D Shestakov, D Usanov… - Optical Materials, 2023 - Elsevier
Zinc tin nitride (ZnSnN 2, ZTN) films synthesized by magnetron co-sputtering at a
temperature close to the ZTN decomposition point and with the cation ratio close to …
temperature close to the ZTN decomposition point and with the cation ratio close to …
Thin film NiO/BaTiO3/ZnO heterojunction diode-based UVC photodetectors
In this work, a P–I–N thin film Al/NiO/BaTiO 3/ZnO/ITO heterojunction diode-based UVC
detector was fabricated and characterized. The thin film layers were grown by a low-cost and …
detector was fabricated and characterized. The thin film layers were grown by a low-cost and …
Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn
MA Reshchikov, M Foussekis, JD McNamara… - Journal of Applied …, 2012 - pubs.aip.org
The optical properties of high-quality GaN co-doped with silicon and zinc are investigated by
using temperature-dependent continuous-wave and time-resolved photoluminescence …
using temperature-dependent continuous-wave and time-resolved photoluminescence …
First‐Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: The Example of Yellow Luminance by GaN: CN+ON and GaN:CN
Point defects play an important role in the photoelectrical properties of semiconductor
materials, and they can be luminescence centers. However, the relationships among the …
materials, and they can be luminescence centers. However, the relationships among the …
Enhancing responsivity and detectivity in broadband UV–VIS photodetector by ex-situ UV–ozone annealing technique
In the present study, we fabricated an Ultraviolet–visible (UV–Vis) photodetector by radio
frequency (RF)–sputtering ZnMgO thin films on an n-type< 001> Si substrate and studied the …
frequency (RF)–sputtering ZnMgO thin films on an n-type< 001> Si substrate and studied the …