An overview of radiation effects on electronic devices under severe accident conditions in NPPs, rad-hardened design techniques and simulation tools
New requirements on post-accident monitoring systems in nuclear power plants pose fresh
challenges for electronic system designers and nuclear power plant personnel, in particular …
challenges for electronic system designers and nuclear power plant personnel, in particular …
Spintronic neural systems
Neural computing, guided by brain-inspired computational frameworks, promises to realize
various cognitive and perception-related tasks. Complementary metal–oxide–semiconductor …
various cognitive and perception-related tasks. Complementary metal–oxide–semiconductor …
Fully nonvolatile and low power full adder based on spin transfer torque magnetic tunnel junction with spin-hall effect assistance
As technology node scales down below 90 nm, the conventional complementary metal
oxide semiconductor (CMOS) logic circuits suffer from various problems such as high …
oxide semiconductor (CMOS) logic circuits suffer from various problems such as high …
Nonvolatile low-cost approximate spintronic full adders for computing in memory architectures
In this article, four novel approximate full-adder (AXFA) circuits based on the emerging
magnetic tunnel junction (MTJ) device is proposed. The proposed magnetic FAs (MFAs) …
magnetic tunnel junction (MTJ) device is proposed. The proposed magnetic FAs (MFAs) …
A low-cost highly reliable spintronic true random number generator circuit for secure cryptography
Generation of random numbers is one of the most important steps in cryptographic
algorithms. High endurance, high performance and low energy consumption are the …
algorithms. High endurance, high performance and low energy consumption are the …
Comparative studies on vertical-channel charge-trap memory thin-film transistors using In-Ga-Zn-O active channels deposited by sputtering and atomic layer …
HR Kim, GH Kim, NJ Seong, KJ Choi, SK Kim… - …, 2020 - iopscience.iop.org
Vertical-channel charge-trap memory thin film-transistors (V-CTM TFTs) using oxide
semiconductors were fabricated and characterized, in which In-Ga-Zn-O (IGZO) channels …
semiconductors were fabricated and characterized, in which In-Ga-Zn-O (IGZO) channels …
[HTML][HTML] Design of 10T full adder cell for ultralow-power applications
This research paper performs symmetrical transient response analysis of FO4 inverter logic
gate at 16-nm technology node. It is observed that symmetry is obtained at the aspect ratio …
gate at 16-nm technology node. It is observed that symmetry is obtained at the aspect ratio …
[PDF][PDF] All-optical computing based on convolutional neural networks
The rapid development of information technology has fueled an ever-increasing demand for
ultrafast and ultralow-energy-consumption computing. Existing computing instruments are …
ultrafast and ultralow-energy-consumption computing. Existing computing instruments are …
Design of an efficient fully nonvolatile and radiation-hardened majority-based magnetic full adder using FinFET/MTJ
As transistor dimensions reach sub-micron scales, new challenges such as power efficiency
and radiation effects that were previously negligible, have become a matter of great concern …
and radiation effects that were previously negligible, have become a matter of great concern …
Spin-based fully nonvolatile full-adder circuit for computing in memory
As CMOS technology scales down toward below 2-digit nanometer dimensions,
exponentially increasing leakage power, vulnerability to radiation induced soft errors have …
exponentially increasing leakage power, vulnerability to radiation induced soft errors have …