Group III–V semiconductors are based on the elements of groups III and V of the periodic
table. The possibility to grow thin-films made of binary, ternary, and quaternary III–V alloys …

Metasurfaces, composed of artificial meta-atoms of subwavelength size, can support strong
light–matter interaction based on multipolar resonances and plasmonics, hence offering the …

In its 60 years of existence, the field of nonlinear optics has gained momentum especially
over the past two decades thanks to major breakthroughs in material science and …

The emergence of two dimensional (2D) materials has opened new possibilities for
exhibiting second harmonic generation (SHG) at the nanoscale, due to their remarkable …

Efficient second harmonic generation (SHG) in nanophotonic designs based on all-dielectric
nanostructures demands materials with large values of the quadratic nonlinear …

The study of electromagnetic scattering in optics and nanophotonics is crucial for
understanding complex nanostructures and optical devices. However, numerical analysis of …

Semiconductor nanowires exhibit numerous capabilities to advance the development of
future optoelectronic devices. Among the III–V material family, gallium phosphide (GaP) is …

Photon frequency conversion using optical materials is a common strategy for light
generation and utilization. Materials capable of visible‐to‐ultraviolet (UV) light conversion …

Gallium phosphide (GaP) has been increasingly prioritized, fueled by the enormous
demands in visible light applications such as biomedical and quantum technologies. GaP …

Tailorable synthesis of axially heterostructured epitaxial nanowires (NWs) with a proper
choice of materials allows for the fabrication of novel photonic devices, such as a …