Effect of film growth rate and thickness on properties of Ge/GaAs (100) thin films
We present a profound effect of film growth rate and thickness on the electrical properties,
intrinsic stresses and surface/interface morphology of thin (1 nm to 250 nm) Ge films grown …
intrinsic stresses and surface/interface morphology of thin (1 nm to 250 nm) Ge films grown …
[PDF][PDF] Study of structure and intrinsic stresses of Ge thin films on GaAs
VF Mitin, VV Kholevchuk, VP Kladko… - Proceedings of the …, 2013 - irbis-nbuv.gov.ua
The effect of film growth rate on the structure and intrinsic stresses of thin (100 nm) Ge films
grown on GaAs (100) substrates was investigate by High Resolution X-Ray Diffraction …
grown on GaAs (100) substrates was investigate by High Resolution X-Ray Diffraction …
Ge/GaAs thin films for thermometer and bolometer application
We demonstrate that the heavily doped and completely compensated Ge thin films on semi-
insulating GaAs substrates are very promising for bolometer and thermoresistor application …
insulating GaAs substrates are very promising for bolometer and thermoresistor application …