A high-performance temperature sensor based on coupled 4H-SiC Schottky diodes is
presented. The linear dependence on temperature of the difference between the forward …

In this paper we investigate the optimized design of a short channel gate-all-around-
junctionless (GAAJ) metal-oxidesemiconductor field-effect-transistor (MOSFET), including …

The linear dependence on temperature of the voltage drop VD across a forward-biased 4H-
SiC pin diode is investigated experimentally. The results show that the fabricated …

The forward current-voltage characteristics (IF-VF) of aluminum (Al)-implanted 4H-SiC pin
diodes are investigated by means of a numerical simulation study that takes into account …

Silicon carbide (SiC) power MOSFETs are available only for high-power and medium-to-
high-voltage applications, generally above 600 V, because for lower blocking voltages, they …

In this paper, the impact of silicon carbide intrinsic defect states, such as Z 1/2 and EH 6/7
centers, on the forward current–voltage curves of aluminum (Al)-implanted 4H-SiC pin …

In this paper, using a numerical simulator, we investigated the current–voltage
characteristics of a Pt/n-GaN thin Schottky diode on the basis of the thermionic emission (TE) …

At the present work, nanocrystalline silicon carbide (3Csingle bondSiC) irradiated by
neutrons (2× 10 13 n/cm 2 s) up to 20 h. The current–voltage (Isingle bondV) characteristics …

The experimental forward current–voltage–temperature (ID–VD–T) characteristics of Mo/4H-
SiC Schottky barrier diodes are investigated by means of a careful simulation study. The …

Higher efficiency in photovoltaic (PV) conversion calls for the use of small Maximum Power
Point Trackers (MPPT) to be placed on board the PV modules. Such circuits require in turn …