Spin-orbit torque and spin-transfer torque magnetoresistive random-access memory stack
H Wu, A Reznicek, B Hekmatshoartabari… - US Patent …, 2024 - Google Patents
Embodiments disclosed herein include a semiconductor structure. The semiconductor
structure may include a spin transfer torque (STT) magnetoresistive random access memory …
structure may include a spin transfer torque (STT) magnetoresistive random access memory …
Magnetoresistance memory device
In general, according to one embodiment, a magnetoresistance memory device includes: a
first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second …
first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second …