Nanoscience and nanotechnology are tremendously increasing fields of research that aim at
producing, characterizing and understanding nanoobjects and assemblies of nanoobjects …

Growth, structural and optical properties of GaN quantum dots are reviewed, with a special
emphasis on plasma-assisted molecular beam epitaxy. The versatility of this technique …

We have performed a real-time in situ x-ray scattering study of the nucleation of GaN
nanowires grown by plasma-assisted molecular beam epitaxy on AlN (0001)/Si (111). The …

We show that intentional Ga doping of AlN nanowires in the 0.01%–0.5% range leads to the
spontaneous formation of nanometric carrier localization centers. Accordingly, for single …

The molecular-beam epitaxy growth of AlN/GaN nanowire superlattices has been studied by
using a combination of in situ x-ray diffraction experiments, high-resolution electron …

Long-range interface correlations in C/Au/C and Ag/Si 3 N 4 layered films consisting of metal
nanoparticles embedded in amorphous matrices are investigated by atomic force …

Semiconductor nanocrystals, also known as quantum dots (QDs), are among the nanoscale
materials that have been most investigated in the last two decades. This article concentrates …

Capping of GaN quantum dots with AlN has been studied at the monolayer scale by
combining atomic force microscopy, high resolution electron microscopy, and grazing …

Surfaces and buried interfaces play critical roles in many environmental, catalytic, and
tribological processes and in a wide variety of applications, including microelectronics and …

The structure and optical response of Ag nanoparticles capped with dielectric BN, Al 2 O 3⁠,
and Y 2 O 3 layers have been studied. The morphological evolution of the nanoparticles has …