Transition-metal contaminants are ubiquitous in Si devices, being introduced both during
wafer growth and in subsequent processing. 1–4 This is frequently detrimental because the …

Many surface and bulk processes generate or consume point defects in crystalline silicon.
Some such processes that commonly occur in silicon device fabrications include …

The study of gold and platinum diffusion is found to allow the separate observation of the
intrinsic point defects, ie, of silicon self-interstitials and of vacancies. The diffusion of gold in …

Thin films of platinum deposited by physical vapor deposition (PVD) processes such as
evaporation and sputtering are used in many academic and industrial settings, for example …

Diffusion of platinum at low temperatures is a convenient way to characterize vacancy
profiles in silicon. This article summarizes the experiments performed to find a standard …

Fission times of uraniumlike nuclei with excitation energies up to about 250 MeV have been
inferred from blocking effects in a single crystal. They are found longer by at least 1 order of …

The present invention is directed to a single crystal CZo chralski-type silicon wafer, and a
process for the preparation thereof, which has at least a surface layer of high resistivity, the …

The Stillinger–Weber interatomic potential is used in molecular dynamics simulations to
compute estimates of the equilibrium and transport properties of self-interstitials and …

In silicon power semiconductors, platinum is used to improve the switching characteristics of
the devices by adjusting the lifetime of the minority charge carriers. Platinum diffusion in …

This work presents a new setup that integrates heavy ion RBS with microbeam technology
combined with high detection solid angle for the measurement of the depth profile and areal …