In recent times, the demand for electrical energy is increased to such an extent that the
scientific research has to be focused on the development of materials that fulfil the growing …

One-dimensional compound semiconductor nanolasers, especially nanowire (NW)-based
nanolasers utilizing III-nitride (AlGaInN) materials system, are an emerging and promising …

White light emitting diodes (LEDs) based on III-nitride InGaN/GaN quantum wells currently
offer the highest overall efficiency for solid state lighting applications. Although current …

A novel technology for controlling the In composition of InGaN quantum wells on the same
wafer was developed, which paved the way for the monolithic integration of three-primary …

In a classical light source, such as a laser, the photon number follows a Poissonian
distribution. For quantum information processing and metrology applications, a non-classical …

The physics of carrier recombinations in III-nitride light emitters are reviewed, with an
emphasis on experimental investigations. After a discussion of various methods of …

The development of high-productivity microLED (μ-LED) pixel panels is crucial as a key
technology for next-generation displays. To provide a fundamental approach to this end, in …

Time-resolved photoluminescence (TRPL) is often used to study the excitonic dynamics of
semiconductor optoelectronics such as the carrier recombination lifetime of III-nitride light …

In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell
nanowire-based LEDs grown using selective-area epitaxy and characterize their electro …

Self-assembled GaN nanocolumns were grown on sapphire and Si substrates by rf-plasma-
assisted molecular-beam-epitaxy, clarifying the growth condition. The nanocolumn crystal …