In this review, we report on fabrication paths, challenges, and emerging solutions to
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …

The advent of the point-contact transistor is one of the most significant technological
achievements in human history with a profound impact on human civilization during the past …

Defect complexes have a significant impact on the structural, electronic, optical and
electrical properties of semiconductors. Several defect complexes formed by n-type and p …

GeSn has emerged as a promising semiconductor with optoelectronic functionality in the
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …

The E centers (dopant-vacancy pairs) play a significant role in dopant deactivation in
semiconductors. In order to gain insight into dopant-defect interactions during epitaxial …

The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor
complexes (D n V with n⩽ 4) that deactivate the donors. This work unambiguously …

Highly n-type Ge attained by shallow As implantation and excimer laser annealing was
studied with positron annihilation spectroscopy and theoretical calculations. We conclude …

Controlled doping with an effective carrier concentration higher than 1020 cm− 3 is a key
challenge for the full integration of Ge into silicon-based technology. Such a highly doped …

Three topical materials systems are discussed from the point of view of point defect
characterization with positron annihilation spectroscopy. The family of III‐nitride …

This Perspective focuses on experimental and theoretical aspects of positron annihilation
spectroscopy. This set of methods is highly suitable for identifying and quantifying vacancy …