Wide-bandgap semiconductor materials: For their full bloom
S Fujita - Japanese journal of applied physics, 2015 - iopscience.iop.org
Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power
devices, supporting a future energy-saving society. While GaN-based white LEDs have …
devices, supporting a future energy-saving society. While GaN-based white LEDs have …
Tuning the optoelectronic properties of hematite with rhodium doping for photoelectrochemical water splitting using density functional theory approach
Abstract Hematite (Fe2O3) is one of the best candidates for photoelectrochemical water
splitting due to its abundance and suitable bandgap. However, its efficiency is mostly …
splitting due to its abundance and suitable bandgap. However, its efficiency is mostly …
Effect of Orientation on Bulk and Surface Properties of Sn-doped Hematite (α-Fe2O3) Heteroepitaxial Thin Film Photoanodes
The orientation dependence on the photoelectrochemical properties of Sn-doped hematite
photoanodes was studied by means of heteroepitaxial film growth. Nb-doped SnO2 (NTO) …
photoanodes was studied by means of heteroepitaxial film growth. Nb-doped SnO2 (NTO) …
The enhanced performance of 3C-SiC photocathodes for the generation of hydrogen through the use of cocatalysts
N Ichikawa, M Kato, M Ichimura - Applied Physics Letters, 2016 - pubs.aip.org
We formed Pt or Pd particles as cocatalysts on a 3C-SiC photocathode. Photocurrents from
the 3C-SiC photocathodes increased by presence of the cocatalysts, and there was an …
the 3C-SiC photocathodes increased by presence of the cocatalysts, and there was an …
Fabrication and Characterization of Semiconductor Photoelectrodes with Orientation-Controlled α-Fe2O3 Thin Films
H Mashiko, K Yoshimatsu, T Oshima… - The Journal of Physical …, 2016 - ACS Publications
Epitaxial α-Fe2O3 thin films on conducting Ta-doped SnO2 bottom layers are prepared by
pulsed-laser deposition in order to elucidate variation of the photoelectrochemical (PEC) …
pulsed-laser deposition in order to elucidate variation of the photoelectrochemical (PEC) …
Bandgap-engineered iron oxides for solar energy harvesting
M Seki - Iron Ores and Iron Oxide Materials, 2018 - books.google.com
Epitaxial films of technique, and their Rh-substituted photoelectrochemical α-Fe 2 O3
characteristics were fabricated by a pulsed laser deposition were investigated for the …
characteristics were fabricated by a pulsed laser deposition were investigated for the …
Process-function data mining for the discovery of solid-state iron-oxide PV
E Borvick, AY Anderson, HN Barad… - ACS Combinatorial …, 2017 - ACS Publications
Data mining tools have been known to be useful for analyzing large material data sets
generated by high-throughput methods. Typically, the descriptors used for the analysis are …
generated by high-throughput methods. Typically, the descriptors used for the analysis are …
Bandgap engineering in V-substituted α-Fe2O3 photoelectrodes
A Sathe, M Seki, H Zhou, JX Chen… - Applied Physics …, 2019 - iopscience.iop.org
We demonstrated bandgap engineering of iron oxide (α-Fe 2 O 3), which is one of the most
promising photocatalysts for solar water splitting. It was found that V substitution and thermal …
promising photocatalysts for solar water splitting. It was found that V substitution and thermal …
Synthesis of quaternary high entropy carbonate and UV-Vis-NIR optical properties
D Yang, J Wang, J Shi, J Ren - Applied Physics A, 2024 - Springer
In this study, four-element high entropy carbonate solid solutions with Mg as the primary
element and three equimolar transition metal elements (Co, Ni, Zn, Fe, Mn and Cu) were …
element and three equimolar transition metal elements (Co, Ni, Zn, Fe, Mn and Cu) were …
Improved performance of 3CSiC photocathodes by using a pn junction
N Ichikawa, M Ichimura, M Kato - International Journal of Hydrogen Energy, 2017 - Elsevier
To improve the performance of 3Csingle bondSiC photocathodes, we formed a pn junction
at the 3Csingle bondSiC surface. Using current–voltage measurements for Schottky contacts …
at the 3Csingle bondSiC surface. Using current–voltage measurements for Schottky contacts …