Recent advances in the theory and experimental realization of ferromagnetic
semiconductors give hope that a new generation of microelectronic devices based on the …

Oxide-diluted magnetic semiconductors (O-DMS) have attracted a great deal of interest in
recent years due to the possibility of inducing room temperature ferromagnetism. These …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

3 d-transition-metal-doped ZnO films (n-type Zn 1− x M x O (x= 0.05–0.25): M= Co, Mn, Cr,
Ni) are formed on sapphire substrates using a pulsed-laser deposition technique, and their …

The current status and prospects of research on ferromagnetism in semiconductors are
reviewed. The question of the origin of ferromagnetism in europium chalcogenides …

We report on the epitaxial growth of a group-IV ferromagnetic semiconductor, Mn x Ge1− x,
in which the Curie temperature is found to increase linearly with manganese (Mn) …

Detailed guidelines for controlling magnetic states in ZnO-based diluted magnetic
semiconductors are given based on ab initio electronic structure calculations within the local …

Existing semiconductor electronic and photonic devices utilize the charge on electrons and
holes in order to perform their specific functionality such as signal processing or light …

The magnetic and magneto-optical properties of a Cr-doped II-VI semiconductor ZnTe were
investigated. Magnetic circular dichroism measurements showed a strong interaction …

We have investigated the magnetic properties of Mn-implanted n-type ZnO single crystals
that are codoped with Sn. Theory predicts that room-temperature carrier-mediated …