4H-SiC-based ESD protection design with optimization of segmented LIGBT for high-voltage applications
KI Do, SH Jin, BS Lee, YS Koo - IEEE Journal of the Electron …, 2021 - ieeexplore.ieee.org
4H-SiC is a wide-bandgap material that exhibits excellent high-temperature conductivity and
high operating voltage. These characteristics can provide high electrostatic discharge (ESD) …
high operating voltage. These characteristics can provide high electrostatic discharge (ESD) …
A novel dual-direction SCR embedded with segmental and cross-bridge topology for high-voltage ESD protection
H Liang, X Cao, J Liu, J Sun, H Liang… - … on Electron Devices, 2023 - ieeexplore.ieee.org
A novel dual-direction silicon-controlled rectifier (DDSCR) embedded with segmental and
cross-bridge topology, which is named DDSCRESCT, is proposed and optimized for …
cross-bridge topology, which is named DDSCRESCT, is proposed and optimized for …
Design and Manufacture of Dual-Gate DDSCR with High Failure Current and Holding Voltage
X Bao, Y Wang, Y Liu, X Jin - Chinese Journal of Electrical …, 2024 - ieeexplore.ieee.org
High-voltage controller area network (CAN) buses have a harsh working environment and
require a robust electrostatic discharge (ESD) design window. Thus, ordinary silicon …
require a robust electrostatic discharge (ESD) design window. Thus, ordinary silicon …
ESD Protection Based on Stacked SCRs With Adjustable Triggering Voltage for CMOS High-Voltage Application
J Bourgeat, Y Solaro, N Guitard - 2022 44th Annual EOS/ESD …, 2022 - ieeexplore.ieee.org
This paper presents a new local ESD protection structure for High Voltage Application. This
structure is based on a stack of Bi-directional SCRs and realized in 55nm CMOS technology …
structure is based on a stack of Bi-directional SCRs and realized in 55nm CMOS technology …
An ESD Investigation of 100 V UHV nLDMOSs Embedded with Schottky/SCR in the Drain Side
JY Lai, SL Chen, ZW Liu, XC Mai… - 2022 8th International …, 2022 - ieeexplore.ieee.org
In this paper, the original 100 V nLDMOS device is modulated by embedded Schottky/SCR
devices in the drain side via a TSMC 0.5 μm UHV process. This work is divided into three …
devices in the drain side via a TSMC 0.5 μm UHV process. This work is divided into three …
Design and Implementation of a novel high failure current shunt MLSCR
W Liu, H Yang, Y Wang, H Tao… - 2024 3rd International …, 2024 - ieeexplore.ieee.org
The failure current (I t2) in electrostatic discharge (ESD) protection device design indicates
its protective capabilities. The higher the failure current, the greater the anti-static capability …
its protective capabilities. The higher the failure current, the greater the anti-static capability …