We report an intrinsic strain engineering, akin to thin filmlike approaches, via irreversible
high-temperature plastic deformation of a tetragonal ferroelectric single-crystal BaTiO 3 …

Ferroelectrics have become indispensable in the development of energy-efficient oxide
electronics. Their domain state is closely linked to the final device functionality, making …

Structural domains and domain walls, inherent in single crystalline perovskite oxides, can
significantly influence the properties of the material and therefore must be considered as a …

We report step edge-induced localized defects suppressing subsequent antiphase
boundary formation in the bulk structure of a trilayer oxide heterostructure. The …

Hexagonal manganese oxides R Mn O 3 (R= Y, Ho–Lu, Sc, and In) show intriguing
topological ferroelectric domain walls with variable conductivity, leading to domain wall …

Extensive studies have been performed on layered compounds, ranging from layered
cuprates to van der Waals materials with critical issues of intergrowths and stacking faults …

The rotation of polarization at 90-degree domain walls in tetragonal BaTiO 3 was directly
observed by the STEM-CBED method, which combines scanning transmission electron …

Ferroelectrics are known as important functional materials that play various roles in
electronics, various sensors, and energy harvesting applications. The functional properties …

Hexagonal manganese oxides RMnO $ _3 $ show intriguing topological ferroelectric-
domain walls with variable conductivity, leading to domain wall engineering. Despite the …

Oxide electronics have emerged as an alternative to replace the current silicon-based
technology. Owing to a rich elemental composition compared to that of doped silicon …