Negative Design Margin Realization through Deep Path Activity Detection Combined with Dynamic Voltage Scaling in a 55 nm Near-Threshold 32-Bit Microcontroller
RZ Yu, ZH Li, X Deng, ZL Liu - Sensors, 2023 - mdpi.com
This paper presents an innovative approach for predicting timing errors tailored to near-/sub-
threshold operations, addressing the energy-efficient requirements of digital circuits in …
threshold operations, addressing the energy-efficient requirements of digital circuits in …
A Near-Threshold Spiking Neural Network Accelerator With a Body-Swapping-Based Error Detection and Correction Technique
Specialized architecture combined with near-and subthreshold voltage circuits emerges as
a promising candidate to improve the energy efficiency in performing complex computing …
a promising candidate to improve the energy efficiency in performing complex computing …
iEDCL: Streamlined, False-Error-Free Error Detection and Correction Scheme in a Near-Threshold Enabled 32-bit Processor
R Yu, Z Li, X Deng, Z Wang, W Jia… - IEEE Transactions on …, 2024 - computer.org
This article presents internal error detection, correction, and latching (iEDCL), a designer-
friendly, fully functional error detection and correction (EDAC) approach tailored for energy …
friendly, fully functional error detection and correction (EDAC) approach tailored for energy …
Low area, low power, robust, highly sensitive error detecting latch for resilient architectures
Operating at lower supply voltages to meet ever-increasing demands for power-efficiency
unfortunately aggravates process, voltage, and temperature (PVT) variability. Resilient …
unfortunately aggravates process, voltage, and temperature (PVT) variability. Resilient …
Design and analysis of leakage-induced false error tolerant error detecting latch for sub/near-threshold applications
P Sharma, BP Das - IEEE Transactions on Device and Materials …, 2020 - ieeexplore.ieee.org
The digital designs operating in sub/near-threshold region are susceptible to timing errors
due to the extreme impact of process, voltage, and temperature (PVT) variations. This paper …
due to the extreme impact of process, voltage, and temperature (PVT) variations. This paper …
A low-area, low-power, and low-leakage error-detecting latch for timing-error resilient system designs
CT Liu, ZW Chang, SN Wei, JS Wang… - 2018 31st IEEE …, 2018 - ieeexplore.ieee.org
The error-detecting latch (EDL), which consists of a latch and a transition detector (TD), is
the key circuit to the success of timing-error resilient system design. In order to realize a truly …
the key circuit to the success of timing-error resilient system design. In order to realize a truly …
Testable error detection logic design applied to an asynchronous timing resilient template
Resilient circuits are becoming a popular alternative to cope with process, voltage, and
temperature variability under ultra-deep-submicron technology. Timing resilient …
temperature variability under ultra-deep-submicron technology. Timing resilient …
More than a timing resilient template: a case study on reliability-oriented improvements on blade
FA Kuentzer - 2018 - meriva.pucrs.br
As the VLSI design moves into ultra-deep-submicron technologies, timing margins added
due to variabilities in the manufacturing process, operation temperature and supply voltage …
due to variabilities in the manufacturing process, operation temperature and supply voltage …
A Timing-Monitoring Sequential for Forward and Backward Error-Detection in 28 nm FD-SOI
A Bonetti, J Constantin, A Ternan… - 2018 IEEE International …, 2018 - ieeexplore.ieee.org
The increasing impact of variability on near-threshold nanometer circuits calls for a tighter
online monitoring and control of the available timing margins. Error-detection sequentials …
online monitoring and control of the available timing margins. Error-detection sequentials …
Aumento de vida útil de circuitos integrados digitais com técnicas de detecção e correção de erros temporais in situ
A dos Santos Silva - 2018 - repositorio.ufmg.br
Advances in the manufacturing processes of microelectronics devices led to an increase
miniaturization of the Field Eect Transistors (FETs), reaching nanometer scale nowadays …
miniaturization of the Field Eect Transistors (FETs), reaching nanometer scale nowadays …