The potential of micro and nano electromechanical systems (M and NEMS) has expanded
due to advances in materials and fabrication processes. A wide variety of materials are now …

The ferroelectric field-effect transistors (FeFETs) with HfO2-based ferroelectric layers in the
gate stacks are emerging as one of the most promising candidates for the next-generation …

The effects of proton radiation on TiN/Zr-doped-HfO 2 (HZO)/Al 2 O 3/P+-Ge ferroelectric
tunneling junctions are investigated in the present work. The electrical characteristics are …

Radiation and temperature hardness are important for electronic devices operating in harsh
environments such as modern medical equipment, outer space, and nuclear energy …

This work investigates the role of Mn-doping of ferroelectric lead zirconate titanate (PZT) thin
films exposed to a range of ionizing radiation doses. PZT thin films were fabricated with both …

The ability to tailor the performance of functional materials, such as semiconductors, via
careful manipulation of defects has led to extraordinary advances in microelectronics …

This study examines the effects of sputter deposition growth conditions on IrO 2 thin films
developed as electrode layers for Pb (Zr x Ti 1-x) O 3 piezoelectric Micro-Electro-Mechanical …

This work investigates the role of microstructure on radiation-induced changes to the
functional response of ferroelectric thin films. Chemical solution-deposited lead zirconate …

The concept of “fiber art” not only expresses a kind of art but also reflects the course of this
art—the evolution from a material to an art. It also reflects the characteristics of this art form …

A new statistical approach for modeling diffraction profiles is introduced, using Bayesian
inference and a Markov chain Monte Carlo (MCMC) algorithm. This method is demonstrated …