Flexible neuromorphic electronics that emulate biological neuronal systems constitute a
promising candidate for next‐generation wearable computing, soft robotics, and …

Metal‐halide perovskites have drawn profuse attention during the past decade, owing to
their excellent electrical and optical properties, facile synthesis, efficient energy conversion …

An investigation of the kinetic behavior of MAPbI3 memristors shows that the onset voltage
to a high conducting state depends strongly on the voltage sweep rate, and the impedance …

There is an increased demand for next-generation memory devices with high density and
fast operation speed to replace conventional memory devices. Memristors are promising …

Organic and perovskite memristors have superior characteristics both in material and
structural perspectives, and therefore have been evaluated for possible integration as bio …

Over the past decade, intensive research efforts have been directed toward the field of
organic–inorganic hybrid perovskites, with dramatic progress made in both the photovoltaic …

To improve the quantum efficiency and stability of perovskite quantum dots, the structural
and optical properties are optimized by varying the concentration of Ni doping in CsPbBr3 …

Resistive switching random access memory (RRAM), also known as memristor, is regarded
as an emerging nonvolatile memory and computing-in-memory technology to address the …

Halide perovskites are promising candidates for resistive memories (memristors) due to their
mixed electronic/ionic conductivity and the real activation mechanism is currently under …

Organometal halide perovskites have recently attracted significant attention as switching
materials for resistive random‐access memory (ReRAM) applications. However, the …