摘要光刻机是极大规模集成电路制造的核心装备, 深紫外光刻机是用于先进技术节点芯片制造的
主流光刻设备. 光刻机的成像质量直接影响光刻机性能指标, 是光刻机正常工作的前提 …

Extreme ultraviolet (EUV) lithography plays a vital role in the advanced technology nodes of
integrated circuits manufacturing. Source mask optimization (SMO) is a critical resolution …

摘要光刻是将集成电路器件的结构图形从掩模转移到硅片或其他半导体基片表面上的工艺过程,
是实现高端芯片量产的关键技术. 在摩尔定律的推动下, 光刻技术跨越了90~ 7 nm …

Immersion lithography systems with hyper-numerical aperture (hyper-NA)(NA> 1) have
become indispensable in nanolithography for technology nodes of 45 nm and beyond …

Source mask optimization (SMO) is a powerful and effective technique to obtain sufficient
process stability in optical lithography, particularly in view of the challenges associated with …

Recently, a set of gradient-based optical proximity correction (OPC) and phase-shifting mask
(PSM) optimization methods has been developed to solve for the inverse lithography …

Source mask optimization (SMO) is one of the indispensable resolution enhancement
techniques to guarantee the image fidelity and process robustness for the 2Xnm technology …

Inverse mask synthesis is achieved by minimizing a cost function on the difference between
the output and desired patterns. Such a minimization problem can be solved by a level-set …

Extreme ultraviolet (EUV) lithography is the most promising technology for the next
generation very-large scale integrated circuit fabrication. EUV lithography invariably …

This article presents a topology optimization approach for micro-and nano-devices
fabricated by optical projection lithography. Incorporating the photolithography process and …