Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …

Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …

Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …

A sustainable energy future requires power electronics that can enable significantly higher
efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

Fast states at SiO 2/SiC interfaces annealed in NO at 1150–1350 C have been investigated.
The response frequency of the interface states was measured by the conductance method …

In this work, SiO 2 was evenly coated on dry yeast as biological template by sol-gel method,
and the internal substances of yeast were removed at 700° C to obtain hollow silicon …

Interface properties of 4H-SiC (112̅0) and (11̅00) walls, the absence of junction FET
resistance, and the higher metal-oxide-semiconductor (MOS) structures annealed in nitric …

Alkali (Rb and Cs) and alkaline earth (Ca, Sr, and Ba) elements have been investigated as
interface passivation materials for metal-oxide-semiconductor field-effect transistors …

Effects of high-temperature (1400° C–1600° C) N 2 annealing on the interface states of 4H-
SiC/SiO 2 and the channel mobility of 4H-SiC metal–oxide–semiconductor field-effect …