Investigation of the formation of defects under fast neutrons and gamma irradiation in 3C–SiC nano powder
In this work cubic phase, silicon carbide nano-powders were irradiated at the high-flux
pulsed reactor IBR–2 (Dubna, Russia). The 3C–SiC powder was irradiated with neutron …
pulsed reactor IBR–2 (Dubna, Russia). The 3C–SiC powder was irradiated with neutron …
Helium and strontium co-implantation into SiC at room temperature and isochronal annealing: structural evolution of SiC and migration behaviour of strontium
Understanding the structural evolution of SiC implanted with fission product surrogates in
the presence of helium (He) is of importance for its application in both fission and fusion …
the presence of helium (He) is of importance for its application in both fission and fusion …
[HTML][HTML] Effect of a silicon dioxide diffusion barrier layer and its sublimation on the migration of strontium implanted into SiC
HAA Abdelbagi, EG Njoroge, TM Mohlala… - Materials Chemistry and …, 2023 - Elsevier
Thin film diffusion barriers are inevitable in nuclear reactors for preventing the release of
radioactive waste products. The combination of chemical stable silicon carbide (SiC) and …
radioactive waste products. The combination of chemical stable silicon carbide (SiC) and …
Helium assisted migration of silver implanted into SiC
The effects of helium (He) in the migration behaviour of silver (Ag) implanted into
polycrystalline siclicon carbide (SiC) was investigated. Polycrystalline SiC wafers were first …
polycrystalline siclicon carbide (SiC) was investigated. Polycrystalline SiC wafers were first …
The migration behaviour of strontium co-implanted with helium into SiC at room temperature and annealed at temperatures above 1000 oC
The study investigated the migration behaviour of Sr implanted into SiC in the presence of
helium (He). Sr ions were implanted into polycrystalline SiC samples (Sr-SiC) at room …
helium (He). Sr ions were implanted into polycrystalline SiC samples (Sr-SiC) at room …
The influence of helium-induced defects on the migration of strontium implanted into SiC above critical amorphization temperature
The presence of radiation-induced defects and the high temperature of implantation are
breeding grounds for helium (He) to accumulate and form He-induced defects (bubbles …
breeding grounds for helium (He) to accumulate and form He-induced defects (bubbles …
The effects of helium, strontium, and silver triple ions implanted into SiC
The effects of helium (He), silver (Ag) and strontium (Sr) ions triple implanted into
polycrystalline silicon carbide (SiC) were investigated. Ag ions of 360 keV were first …
polycrystalline silicon carbide (SiC) were investigated. Ag ions of 360 keV were first …
Effects of swift heavy ion irradiation and annealing on the microstructure and recrystallizationof SiC pre-implanted with Sr ions
Polycrystalline SiC wafers were implanted with 360 keV strontium (Sr) ions at room
temperature (RT) to a fluence of 2× 1016 cm− 2. Some of the implanted samples were …
temperature (RT) to a fluence of 2× 1016 cm− 2. Some of the implanted samples were …
[HTML][HTML] Effects of helium (He) bubbles and annealing on the structural evolution and migration behavior of silver (Ag) implanted into polycrystalline SiC at 350° C
SZ Mtsi, A Sohatsky, ZAY Abdalla, EG Njoroge… - Vacuum, 2023 - Elsevier
The effects of helium (He) bubbles and annealing on the structural evolution and the
migration of silver (Ag) implanted into polycrystalline silicon carbide were investigated. Ag …
migration of silver (Ag) implanted into polycrystalline silicon carbide were investigated. Ag …
Defect formation energies of Ag-and Sr-doped 3C-SiC: A first-principles study
S Sholihun, HS Bagariang, M Absor, A Ulil… - International Journal of …, 2023 - ir.lib.ugm.ac.id
In this study, we conduct calculations of Ag-and Sr-doped in 3C-SiC using density-
functional. To model defective systems, we dope Ag and Sr atoms in substitutional and …
functional. To model defective systems, we dope Ag and Sr atoms in substitutional and …