The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

In recent years, many metal oxides have been rigorously studied to be employed as solid
electrolytes for resistive switching (RS) devices. Among these solid electrolytes, lanthanum …

The AlO x-based resistive switching memory device is fabricated by an oxidation diffusion
process that involves depositing an Al film on an ITO substrate and annealing at 400° C in a …

The paper contains a short literature review on the subject of special type of thin film
structures with resistiveswitching memory effect. In the literature, such structures are …

In the ever-expanding digital landscape, efficient solutions are needed that offer mass-
producible, high-density, and low-power data storage capabilities to fulfill the growing …

In this work, we propose a physical memristor/resistive switching device SPICE compact
model, that is able to accurately fit both unipolar/bipolar devices settling to its current-voltage …

Direct evidence for the presence of a CuO structure in the grain boundaries of Cu 2 O thin
films by chemical vapor deposition is provided by high resolution automated phase and …

Organic and inorganic hybrid materials have drawn more interest in the field of electronic
devices. The metal-organic frameworks (MOFs) have emerged as one of the promising …

In this article, the annealing effect on resistive switching (RS) characteristics of
Al/CuO/indium tin oxide (ITO) resistive random access memory (RRAM) devices is …

In recent years, resistive switching memory devices are attracted much attention for high-
density non-volatile memory applications owing to their cell scalability, multilevel operations …