Investigation of analog parameters and miller capacitance affecting the circuit performance of double gate tunnel field effect transistors
TCAD Simulations for 30 nm double gate tunnel field effect transistor (DGTFET) reports
steeper subthreshold swing, SS~ 15 mV/dec, I ON~ 10–4 A/µm, and low off-state current I …
steeper subthreshold swing, SS~ 15 mV/dec, I ON~ 10–4 A/µm, and low off-state current I …