Over the past two decades, the research of (Ga, Mn) As has led to a deeper understanding
of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries …

Spin-dependent transport properties are investigated in a single-crystal magnetic tunnel
junction (MTJ) which consists of two Fe electrodes separated by an MgO insulating barrier …

This paper has studied the electronic properties of multi-diluted magnetic semiconductor
(DMS) layers Ga (1− x) MnxAs interposed between nonmagnetic GaAs layers. The …

A device with adjustable resistance includes two magnetic elements separated by an
insulating or semi-conductor ele ment. The resistance of the device depends on the position …

In this work, a theoretical study of spin transport in a pseudovalve spin (PSV) heterostructure
is conducted. For the semiconductor (SC), the conduction band at the $\Gamma $ point of …

The tunneling magnetoresistance (TMR) in GaMnAs/GaAs/GaMnAs magnetic tunnel
junctions is studied under an extended coherent tunneling approach where both the …

En el presente trabajo se realiza un análisis teórico del transporte de espín en un
heteroestructura tipo pseudoválvula de espín (PSV) conformada por dos ferromagnéticos …

Publisher Summary This chapter discusses the transport properties of ferromagnetic
semiconductors focusing on the prototype (Ga, Mn) As-based magnetotransport devices …

The donor bound spin polaron in a Cd1− xMnxTe quantum dot is investigated theoretically.
Spin polaronic shifts are estimated using a mean field theory. Magnetization is calculated for …

In this study, we have applied the numerical simulation and the mathematical analysis to
study the resonant tunneling in the case of the existing barriers of electromagnetic material …