摘要高功率半导体激光器是固体激光器和光纤激光器的主要泵浦源. 激光泵浦源性能的大幅提升
直接促进了固体激光器, 光纤激光器等激光器的发展. 主要介绍了8xx nm 和9xx nm …

High power semiconductor lasers are the main pump source for solid-state lasers and fiber
lasers. The improvement in the performance of laser pump sources directly promotes the …

Typical for broad-area laser (BAL) diodes operating in a continuous-wave mode is a
narrowing of the near-field (NF) width at the output facet for high injection currents (output …

半导体激光器体积小, 效率高, 但单元输出功率低, 光束质量差限制了其应用. 介绍了提升半导体
激光器功率及光束质量的最新进展, 对各种技术途径和实验结果进行了综述报道 …

Experimental studies into the beam parameter product (BPP) of 940–980 nm GaAs-based
high-power diode lasers are presented. Such lasers exhibit broadening far field and …

With rising current, the lateral far-field angle of high-power broad-area lasers widens (far-
field blooming), which can be partly attributed to non-thermal effects due to carrier-induced …

GaAs based high power broad area lasers are the most efficient source of optical energy
and are used in many industrial applications. Despite considerable improvement in power …

Photonic-crystal surface-emitting lasers (PCSELs) have led to amazing results in
overcoming the divergence limitation of semiconductor lasers. However, so far, the physical …

Broad-area diode lasers (BALs) with high power are highly desirable for a variety of
applications. However, such lasers suffer from strongly deteriorated beam quality due to …

Progress in studies to increase the lateral brightness B lat of broad area lasers is reviewed.
B lat= P out/BPP lat is maximized by developing designs and technology for lowest lateral …