Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

F Pan, S Gao, C Chen, C Song, F Zeng - Materials Science and …, 2014 - Elsevier
This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

Polymer‐based resistive memory materials and devices

WP Lin, SJ Liu, T Gong, Q Zhao… - Advanced materials, 2014 - Wiley Online Library
Due to the advantages of good scalability, flexibility, low cost, ease of processing, 3D‐
stacking capability, and large capacity for data storage, polymer‐based resistive memories …

Organic resistive memory devices: performance enhancement, integration, and advanced architectures

B Cho, S Song, Y Ji, TW Kim… - Advanced Functional …, 2011 - Wiley Online Library
In recent years, organic resistive memory devices in which active organic materials possess
at least two stable resistance states have been extensively investigated for their promising …

Electrical properties of polymer nanocomposites containing rod-like nanofillers

RM Mutiso, KI Winey - Progress in Polymer Science, 2015 - Elsevier
We present an in-depth critical review of major experimental, simulation, and theoretical
work in the field of conducting polymer nanocomposites containing rod-like particles such as …

Polymer memristor for information storage and neuromorphic applications

Y Chen, G Liu, C Wang, W Zhang, RW Li, L Wang - Materials Horizons, 2014 - pubs.rsc.org
Polymer materials have been considered as promising candidates for the implementation of
memristor devices due to their low-cost, easy solution processability, mechanical flexibility …

Parylene based memristive devices with multilevel resistive switching for neuromorphic applications

AA Minnekhanov, AV Emelyanov, DA Lapkin… - Scientific reports, 2019 - nature.com
In this paper, the resistive switching and neuromorphic behaviour of memristive devices
based on parylene, a polymer both low-cost and safe for the human body, is …

Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices.

J Liu, Z Yin, X Cao, F Zhao, L Wang… - … (Deerfield Beach, Fla …, 2012 - europepmc.org
A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO
as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by …

Electrical memory devices based on inorganic/organic nanocomposites

TW Kim, Y Yang, F Li, WL Kwan - NPG Asia Materials, 2012 - nature.com
Nonvolatile memory devices based on hybrid inorganic/organic nanocomposites have
emerged as excellent candidates for promising applications in next-generation electronic …

Recent advances in memory devices with hybrid materials

B Hwang, JS Lee - Advanced electronic materials, 2019 - Wiley Online Library
Increasing demands for information‐storage capacity and for miniaturization of memory cells
have driven exploration of new‐generation data storage devices, because the conventional …

Pseudohalide‐Induced 2D (CH3NH3)2PbI2(SCN)2 Perovskite for Ternary Resistive Memory with High Performance

XF Cheng, X Hou, J Zhou, BJ Gao, JH He, H Li, QF Xu… - Small, 2018 - Wiley Online Library
Recently, organic–inorganic hybrid perovskites (OIHP) are studied in memory devices, but
ternary resistive memory with three states based on OIHP is not achieved yet. In this work …