Successful operation of 4H-silicon carbide (SiC) MOSFET and integrated electronic circuit
based on 4H-SiC MOSFET is reported at temperature up to in air. The high-temperature …

Silicon carbide PIN diodes have been fabricated using a direct-write laser-doping technique
that reduces defect generation compared to the conventional ion-implantation technique …

设计了一种新型的用于低功耗LDO 线性稳压器的CMOS 高精度参考电流源.
通过亚阈值设计方法得到30nA 与电源电压无关的基准电流. 利用MOS 管寄生二极管反向电流的 …

The surface component of reverse current is a serious limitation for the operation of high
voltage/current devices at high junction temperature. This component may induce reverse …

In this paper, we investigate the electrical characteristics of two trench‐gate‐type super‐
barrier rectifiers (TSBRs) under different p‐body implantation conditions (low and high) …

Thin films of high-quality p-type Li 0.15 Ni 0.85 O (LNO) and n-type ZnO were
heteroepitaxially grown on MgO (111) substrate by pulsed laser deposition technique to …

Some power electronics applications reveal performance weakness of fast recovery silicon
diodes, in spite of significant advance made in their switching performance. The maximum …

Operation of power silicon diodes above the maximum permissible specified junction
temperature can lead to device catastrophic failure that is usually caused by an electrical …

Accurate measurements of leakage reverse current (IR) for PN junctions from silicon device
samples, available at this time as commercial devices have been performed. Above 125 …

Typical experimental blocking IV characteristics measured from room temperature up to high
junction temperature for commercial thyristors available on the market at this time are …