Electronics employed in modern safety-critical systems require severe qualification during
the manufacturing process and in the field, to prevent fault effects from manifesting …

High-quality random numbers are very critical to many fields such as cryptography, finance,
and scientific simulation, which calls for the design of reliable true random number …

The ubiquitous presence of electronic devices demands robust hardware security
mechanisms to safeguard sensitive information from threats. This paper presents a physical …

STT-MRAM is a promising candidate to replace SRAM in Last Level Caches (LLCs) thanks
to its high density and reduced leakage. However, write delay, write energy, defects and risk …

Spin-transfer torque magnetic random access memory (STT-MRAM) has emerged as a
promising alternative to conventional CMOS memory technologies. It offers non-volatility …

A built-in-self-trimming after test (BIST-AT) write strategy for spin-transfer torque magnetic
random access memory (STT-MRAM) is proposed in this work, which aims to reduce the …

With the continuous shrinkage of integrated circuit feature sizes, circuit design has become
increasingly complex, leading to issues such as rising test complexity and inefficiency. A …

Spin Transfer Torque Magnetic Random-Access Memories (STT-MRAMs) are promising
candidates for next-generation data storage due to their non-volatility, fast access times …

Spin-transfer-torque magnetic random access memory (STT-MRAM) is regarded as one of
the most promising non-volatile memory (NVM) technologies, which has the potential to …

În contextul socio-ecologic actual există o cerere din ce în ce mai mare pentru stocarea
eficientă a datelor și procesarea rapidă a informațiilor combinată cu necesitatea unui …