Comprehensive physics-based RRAM compact model including the effect of variability and multi-level random telegraph noise
Abstract Resistive Random Access Memory (RRAM) technologies are a promising
candidate for the development of more energy efficient circuits, for computing, security, and …
candidate for the development of more energy efficient circuits, for computing, security, and …
Experimental Verification and Evaluation of Non-Stateful Logic Gates in Resistive RAM
L Brackmann, T Ziegler, DJ Wouters… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Resistively switching, non-volatile memory devices facilitate new logic paradigms by
combining storage and processing elements. Several non-stateful concepts such as …
combining storage and processing elements. Several non-stateful concepts such as …
Multi-input logic-in-memory for ultra-low power non-von Neumann computing
Logic-in-memory (LIM) circuits based on the material implication logic (IMPLY) and resistive
random access memory (RRAM) technologies are a candidate solution for the development …
random access memory (RRAM) technologies are a candidate solution for the development …
[HTML][HTML] Ultra-low power logic in memory with commercial grade memristors and FPGA-based smart-IMPLY architecture
Reducing power consumption in nowadays computer technologies represents an
increasingly difficult challenge. Conventional computing architectures suffer from the so …
increasingly difficult challenge. Conventional computing architectures suffer from the so …
Energy-efficient non-von neumann computing architecture supporting multiple computing paradigms for logic and binarized neural networks
Different in-memory computing paradigms enabled by emerging non-volatile memory
technologies are promising solutions for the development of ultra-low-power hardware for …
technologies are promising solutions for the development of ultra-low-power hardware for …
Robust circuit and system design for general-purpose computational resistive memories
F Pinto, I Vourkas - Electronics, 2021 - mdpi.com
Resistive switching devices (memristors) constitute a promising device technology that has
emerged for the development of future energy-efficient general-purpose computational …
emerged for the development of future energy-efficient general-purpose computational …
Ultrahigh-density 3-d vertical rram with stacked junctionless nanowires for in-memory-computing applications
The Von-Neumann bottleneck is a clear limitation for data-intensive applications, bringing in-
memory computing (IMC) solutions to the fore. Since large data sets are usually stored in …
memory computing (IMC) solutions to the fore. Since large data sets are usually stored in …
PVT Analysis for RRAM and STT-MRAM-based Logic Computation-in-Memory
Emerging non-volatile resistive memories like Spin-Transfer Torque Magnetic Random
Access Memory (STT-MRAM) and Resistive RAM (RRAM) are in the focus of today's …
Access Memory (STT-MRAM) and Resistive RAM (RRAM) are in the focus of today's …
The role of defects and interface degradation on ferroelectric HZO capacitors aging
The discovery of ferro electricity in HfO 2-based materials, especially Hf 0.5 Zr 0.5 O 2 (HZO),
opened to a wide range of applications. In fact, innovative HZO memories, such as …
opened to a wide range of applications. In fact, innovative HZO memories, such as …
The power of computation-in-memory based on memristive devices
J Yu, MA Lebdeh, HA Du Nguyen… - 2020 25th Asia and …, 2020 - ieeexplore.ieee.org
Conventional computing architectures and the CMOS technology that they are based on are
facing major challenges such as the memory bottleneck making the memory access for data …
facing major challenges such as the memory bottleneck making the memory access for data …