Efficiency droop in light‐emitting diodes: Challenges and countermeasures
Efficiency droop, ie the loss of efficiency at high operating current, afflicts nitride‐based light‐
emitting diodes (LEDs). The droop phenomenon is currently the subject of intense research …
emitting diodes (LEDs). The droop phenomenon is currently the subject of intense research …
Green gap in GaN-based light-emitting diodes: in perspective
Significant progress has been made in the advancement of light-emitting devices in both the
blue and the red parts of the emission spectrum. However, the quantum efficiency of green …
blue and the red parts of the emission spectrum. However, the quantum efficiency of green …
450-nm GaN laser diode enables high-speed visible light communication with 9-Gbps QAM-OFDM
A TO-38-can packaged Gallium nitride (GaN) blue laser diode (LD) based free-space visible
light communication (VLC) with 64-quadrature amplitude modulation (QAM) and 32 …
light communication (VLC) with 64-quadrature amplitude modulation (QAM) and 32 …
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-
emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole …
emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole …
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
Physical mechanisms causing the efficiency droop in InGaN/GaN blue light-emitting diodes
and remedies proposed for droop mitigation are classified and reviewed. Droop …
and remedies proposed for droop mitigation are classified and reviewed. Droop …
Visible-light communications using a CMOS-controlled micro-light-emitting-diode array
We report the high-frequency modulation of individual pixels in 8× 8 arrays of III-nitride-
based micro-pixellated light-emitting diodes, where the pixels within the array range from 14 …
based micro-pixellated light-emitting diodes, where the pixels within the array range from 14 …
Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer
CH Wang, CC Ke, CY Lee, SP Chang… - Applied Physics …, 2010 - pubs.aip.org
A graded-composition electron blocking layer (GEBL) with aluminum composition increasing
along the [0001] direction was designed for c-plane InGaN/GaN light-emitting diodes (LEDs) …
along the [0001] direction was designed for c-plane InGaN/GaN light-emitting diodes (LEDs) …
Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes
Current injection efficiency and internal quantum efficiency (IQE) in InGaN quantum well
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …
Enhancement of heat dissipation in ultraviolet light‐emitting diodes by a vertically oriented graphene nanowall buffer layer
H Ci, H Chang, R Wang, T Wei, Y Wang… - Advanced …, 2019 - Wiley Online Library
For III‐nitride‐based devices, such as high‐brightness light‐emitting diodes (LEDs), the poor
heat dissipation of the sapphire substrate is deleterious to the energy efficiency and restricts …
heat dissipation of the sapphire substrate is deleterious to the energy efficiency and restricts …
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes
In this letter, we experimentally demonstrate direct correlation between efficiency droop and
carrier overflow in InGaN/GaN green light emitting diodes (LEDs). Further, we demonstrate …
carrier overflow in InGaN/GaN green light emitting diodes (LEDs). Further, we demonstrate …