Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

In recent years, the process requirements of nano-devices have led to the gradual reduction
in the scale of semiconductor devices, and the consequent non-negligible sidewall defects …

The atomic layer deposition (ALD) process of TiN thin films is widely used in
microelectronics, but the detailed growth mechanism is still elusive at the atomistic level. In …

A low-temperature passivation method for GaAs surfaces is investigated. Ultrathin AlN layers
are deposited by plasma-enhanced atomic-layer-deposition at 200° C on top of near-surface …

Abstract GaAs (0 0 1) substrates nitrided with N 2 plasma at various temperatures were
investigated after being exposed to air for 40 days. They were studied by means of parallel …

Degradation of salicylic acid (SA) with thin film photocatalyst, titanium dioxide (TiO2),
combined with ultraviolet (UV) radiation was studied. Photocatalysts were prepared on glass …

Several passivation techniques are developed and compared in terms of their ability to
preserve the optical properties of close-to-surface InAs/GaAs quantum dots (QDs). In …

Atomic layer deposition (ALD) is a promising deposition method and has been studied and
used in many different areas, such as displays, semiconductors, batteries, and solar cells …

GaAs (100) was exposed to pulses of trimethylaluminum (TMA, Al (CH 3) 3) and titanium
tetrachloride (TiCl 4) to mimic the first half-cycle of atomic layer deposition (ALD). Both …

The development of an ALD process, which is based on the sequential self-limiting surface
reactions from generally two gaseous precursors, requires knowledge of the reactions …