The future of Moore's Law for high-performance integrated circuits (ICs) is going to be driven
more by advanced packaging and three-dimensional (3D) integration than by simply …

The barrier/seed layer is a key issue in Through Silicon Via (TSV) technology for 3-D
integration. Sputtering is an important deposition method for via metallization in …

The through-silicon-via (TSV) interconnection in 3-D integration is one solution being
explored to solve current 2-D interconnect problems in the semiconductor industry. In this …

Compared to the 2D plane, 3D integrated circuit (IC) structure could provide larger
patterning areas by stacking the multi-planar chips, in which the electrical signals can be …

This study focuses on the fabrication and thermomechanical characterization of Through
Silicon Vias (TSV) with diameters spanning 1-4 µm. In terms of TSV fabrication, scallop-free …

3D integration with TSV is considered to be the development trend of the electronics
packaging industry. It can meet the demand of high integration density, high performance …

Three-dimensional (3-D) integration based on the through silicon via (TSV) technology
involves the processes of wafer thinning, TSV etching and plating, re-distribution layer (RDL) …

Electronics are in a transitional phase where 2D electronics are losing their capability to
keep up with Moore's Law. 3D integration is the next step that allows the continuation to …

3D integrated circuit (IC) structure could provide larger patterning areas by stacking the multi-
planar chips, in which the electrical signals can be vertically conducted via through-silicon …

The purpose of this study is to analyze and discuss the parameters that affect the properties
of supercritical electroplating technique to fill copper into through-wafer holes (Through …