[HTML][HTML] A review of GaN RF devices and power amplifiers for 5G communication applications
In the emerging 5G and beyond 5G (B5G) era, the spotlight is sharply focused on the power
amplifier, a critical component with stringent specification requirements that dictates the …
amplifier, a critical component with stringent specification requirements that dictates the …
An electrothermal model for empirical large-signal modeling of AlGaN/GaN HEMTs including self-heating and ambient temperature effects
C Wang, Y Xu, X Yu, C Ren, Z Wang… - IEEE Transactions …, 2014 - ieeexplore.ieee.org
Accurate modeling of electrothermal effects of GaN electronic devices is critical for reliability
design and assessment. In this paper, an electrothermal model for large signal equivalent …
design and assessment. In this paper, an electrothermal model for large signal equivalent …
Capacitance modeling in dual field-plate power GaN HEMT for accurate switching behavior
In this paper, a surface-potential-based compact model is proposed for the capacitance of
an AlGaN/GaN high-electron mobility transistor (HEMT) dual field-plate (FP) structure, ie …
an AlGaN/GaN high-electron mobility transistor (HEMT) dual field-plate (FP) structure, ie …
Physics-based multi-bias RF large-signal GaN HEMT modeling and parameter extraction flow
In this paper, a consistent DC to RF modeling solution for Al gallium nitride (GaN)/GaN high
electron mobility transistors is demonstrated that is constructed around a surface-potential …
electron mobility transistors is demonstrated that is constructed around a surface-potential …
A Non-Segmented PSpice Model of SiC mosfet With Temperature-Dependent Parameters
A non-segmented PSpice model of silicon carbide metal-oxide semiconductor field effect
transistor (SiC mosfet) with temperature-dependent parameters is proposed in this paper …
transistor (SiC mosfet) with temperature-dependent parameters is proposed in this paper …
Modeling GaN: powerful but challenging
L Dunleavy, C Baylis, W Curtice… - IEEE Microwave …, 2010 - ieeexplore.ieee.org
As GaN technology has developed, first in research laboratories and more recently in
multiple commercial device manufacturers, the demand for improved nonlinear models has …
multiple commercial device manufacturers, the demand for improved nonlinear models has …
Modeling of short-channel effects in GaN HEMTs
In this article, we propose an explicit and analytic charge-based model for estimating short-
channel effects (SCEs) in GaN high-electron-mobility transistor (HEMT) devices. The …
channel effects (SCEs) in GaN high-electron-mobility transistor (HEMT) devices. The …
3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier
Y Niida, Y Kamada, T Ohki, S Ozaki… - 2016 IEEE Topical …, 2016 - ieeexplore.ieee.org
We demonstrated a W-band high-power-density MMIC power amplifier with 80 nm
InAlGaN/GaN HEMTs. The MMIC consists of two-stage cascade units, each of which has two …
InAlGaN/GaN HEMTs. The MMIC consists of two-stage cascade units, each of which has two …
Neural approach for temperature‐dependent modeling of GaN HEMTs
Gallium nitride high electron‐mobility transistors have gained much interest for high‐power
and high‐temperature applications at high frequencies. Therefore, there is a need to have …
and high‐temperature applications at high frequencies. Therefore, there is a need to have …
A GaN MMIC modified Doherty PA with large bandwidth and reconfigurable efficiency
D Gustafsson, JC Cahuana… - IEEE Transactions …, 2014 - ieeexplore.ieee.org
In this paper, we further develop the concept of a wideband Doherty power-amplifier
topology with reconfigurable efficiency. This is done by presenting new theory that-in …
topology with reconfigurable efficiency. This is done by presenting new theory that-in …