In this work, we provide a comprehensive discussion on the various models proposed for the
design and description of resistive random access memory (RRAM), being a nascent …

The emergence of memristive devices plays a significant role to promoting the development
of electronics in the post-Moore era, especially in the fields of information storage, artificial …

With scaling, existing charge-based memory technologies exhibit limitations due to charge
leaking away easily in a smaller device. Therefore, non-charge based memory technologies …

The recent progress of selector and self‐rectifying devices for resistive random‐access
memory applications is reviewed. In particular, the performance of crossbar arrays based on …

Hydrogen peroxide treatment induces the phase transformation of hexagonal ZnO to cubic
ZnO 2 on the surface of the ZnO switching memory film; this oxidation process effectively …

The nociceptor is critical to developed the new generation human-like robots. It is a special
sensory receptor that detects noxious stimuli and responds accordingly. This report …

In this study, we propose a thermally stable memristor with nitrogen-doped hafnium oxide
(HfO: N)-based resistive switching (RS) memory. The memristor with HfO: N as an active …

Resistive switching (RS) memory devices, or memristors, necessitate active materials of
which electronic resistance is tunable by an external electric field. Metal halide perovskites …

The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting
bridge random access memory was investigated. Using a hydrothermal process, we grew …

Electroforming-free resistive switching in memristors is essential to reliably achieving the
performance of high switching speed, high endurance, good signal retention, and low power …