Advances in the measurement and computation of thermal phonon transport properties

AJ Minnich - Journal of Physics: Condensed Matter, 2015 - iopscience.iop.org
Heat conduction by phonons is a ubiquitous process that incorporates a wide range of
physics and plays an essential role in applications ranging from space power generation to …

Near-junction thermal management: Thermal conduction in gallium nitride composite substrates

J Cho, Z Li, M Asheghi… - Annual Review of Heat …, 2015 - dl.begellhouse.com
The thermal management challenge posed by gallium nitride (GaN) high-electron-mobility
transistor (HEMT) technology has received much attention in the past decade. The peak …

[PDF][PDF] Thermal Transport across Solid Interfaces with Nanoscale Imperfections: Effects of Roughness, Disorder, Dislocations, and Bonding on Thermal Boundary …

PE Hopkins - 2013 - core.ac.uk
The efficiency in modern technologies and green energy solutions has boiled down to a
thermal engineering problem on the nanoscale. Due to the magnitudes of the thermal mean …

Universal phonon mean free path spectra in crystalline semiconductors at high temperature

JP Freedman, JH Leach, EA Preble, Z Sitar, RF Davis… - Scientific reports, 2013 - nature.com
Thermal conductivity in non-metallic crystalline materials results from cumulative
contributions of phonons that have a broad range of mean free paths. Here we use high …

[HTML][HTML] Size dictated thermal conductivity of GaN

TE Beechem, AE McDonald, EJ Fuller… - Journal of Applied …, 2016 - pubs.aip.org
The thermal conductivity of n-and p-type doped gallium nitride (GaN) epilayers having
thicknesses of 3–4 μm was investigated using time domain thermoreflectance. Despite …

Dislocation-induced thermal transport anisotropy in single-crystal group-III nitride films

B Sun, G Haunschild, C Polanco, J Ju, L Lindsay… - Nature materials, 2019 - nature.com
Dislocations, one-dimensional lattice imperfections, are common to technologically
important materials such as III–V semiconductors, and adversely affect heat dissipation in …

Phonon scattering in strained transition layers for GaN heteroepitaxy

J Cho, Y Li, WE Hoke, DH Altman, M Asheghi… - Physical Review B, 2014 - APS
Strained transition layers, which are common for heteroepitaxial growth of functional
semiconductors on foreign substrates, include high defect densities that impair heat …

Experimental metrology to obtain thermal phonon transmission coefficients at solid interfaces

C Hua, X Chen, NK Ravichandran, AJ Minnich - Physical Review B, 2017 - APS
Interfaces play an essential role in phonon-mediated heat conduction in solids, impacting
applications ranging from thermoelectric waste heat recovery to heat dissipation in …

Semi-analytical solution to the frequency-dependent Boltzmann transport equation for cross-plane heat conduction in thin films

C Hua, AJ Minnich - Journal of Applied Physics, 2015 - pubs.aip.org
Cross-plane heat transport in thin films with thicknesses comparable to the phonon mean
free paths is of both fundamental and practical interest for applications such as light-emitting …

Phonon black-body radiation limit for heat dissipation in electronics

J Schleeh, J Mateos, I Íñiguez-de-la-Torre… - Nature materials, 2015 - nature.com
Thermal dissipation at the active region of electronic devices is a fundamental process of
considerable importance,,. Inadequate heat dissipation can lead to prohibitively large …