Advances in the measurement and computation of thermal phonon transport properties
AJ Minnich - Journal of Physics: Condensed Matter, 2015 - iopscience.iop.org
Heat conduction by phonons is a ubiquitous process that incorporates a wide range of
physics and plays an essential role in applications ranging from space power generation to …
physics and plays an essential role in applications ranging from space power generation to …
Near-junction thermal management: Thermal conduction in gallium nitride composite substrates
The thermal management challenge posed by gallium nitride (GaN) high-electron-mobility
transistor (HEMT) technology has received much attention in the past decade. The peak …
transistor (HEMT) technology has received much attention in the past decade. The peak …
[PDF][PDF] Thermal Transport across Solid Interfaces with Nanoscale Imperfections: Effects of Roughness, Disorder, Dislocations, and Bonding on Thermal Boundary …
PE Hopkins - 2013 - core.ac.uk
The efficiency in modern technologies and green energy solutions has boiled down to a
thermal engineering problem on the nanoscale. Due to the magnitudes of the thermal mean …
thermal engineering problem on the nanoscale. Due to the magnitudes of the thermal mean …
Universal phonon mean free path spectra in crystalline semiconductors at high temperature
Thermal conductivity in non-metallic crystalline materials results from cumulative
contributions of phonons that have a broad range of mean free paths. Here we use high …
contributions of phonons that have a broad range of mean free paths. Here we use high …
[HTML][HTML] Size dictated thermal conductivity of GaN
TE Beechem, AE McDonald, EJ Fuller… - Journal of Applied …, 2016 - pubs.aip.org
The thermal conductivity of n-and p-type doped gallium nitride (GaN) epilayers having
thicknesses of 3–4 μm was investigated using time domain thermoreflectance. Despite …
thicknesses of 3–4 μm was investigated using time domain thermoreflectance. Despite …
Dislocation-induced thermal transport anisotropy in single-crystal group-III nitride films
Dislocations, one-dimensional lattice imperfections, are common to technologically
important materials such as III–V semiconductors, and adversely affect heat dissipation in …
important materials such as III–V semiconductors, and adversely affect heat dissipation in …
Phonon scattering in strained transition layers for GaN heteroepitaxy
Strained transition layers, which are common for heteroepitaxial growth of functional
semiconductors on foreign substrates, include high defect densities that impair heat …
semiconductors on foreign substrates, include high defect densities that impair heat …
Experimental metrology to obtain thermal phonon transmission coefficients at solid interfaces
Interfaces play an essential role in phonon-mediated heat conduction in solids, impacting
applications ranging from thermoelectric waste heat recovery to heat dissipation in …
applications ranging from thermoelectric waste heat recovery to heat dissipation in …
Semi-analytical solution to the frequency-dependent Boltzmann transport equation for cross-plane heat conduction in thin films
C Hua, AJ Minnich - Journal of Applied Physics, 2015 - pubs.aip.org
Cross-plane heat transport in thin films with thicknesses comparable to the phonon mean
free paths is of both fundamental and practical interest for applications such as light-emitting …
free paths is of both fundamental and practical interest for applications such as light-emitting …
Phonon black-body radiation limit for heat dissipation in electronics
J Schleeh, J Mateos, I Íñiguez-de-la-Torre… - Nature materials, 2015 - nature.com
Thermal dissipation at the active region of electronic devices is a fundamental process of
considerable importance,,. Inadequate heat dissipation can lead to prohibitively large …
considerable importance,,. Inadequate heat dissipation can lead to prohibitively large …