III-nitride wide bandgap semiconductors are promising materials for modern optoelectronics
and electronics. Their application has progressed greatly thanks to the continuous quality …

Since there is no GaN bulk single crystal available, the whole technological development of
GaN based devices relies on heteroepitaxy. Numerous defects are generated in the …

A transmission electron microscopy study of the reduction mechanisms for defect densities
in epitaxial lateral overgrown (ELO) GaN films is presented. In the standard one step ELO …

We demonstrate the fabrication of N-face GaN nanorods by metal organic vapour phase
epitaxy (MOVPE), using continuous-flux conditions. This is in contrast to other approaches …

The microscopical evolution of GaN grown by metalorganic vapor-phase epitaxy is
investigated at all its stages, as nucleation layer growth, recrystallization, epitaxial …

Single-crystal GaN thin films (500nm) were grown by low-pressure metal-organic vapour-
phase epitaxy (LP-MOVPE) on Si (111) substrates using AlN buffer layers. Depending on …

A transmission electron microscopy study of structural defects induced by the introduction of
Mg during the growth of metalorganic vapor phase epitaxy GaN is presented. These defects …

The ability of in situ SiNx interlayers to lower the density of threading dislocations (TDs) has
been studied for the growth of c-plane (0001) GaN epilayers on sapphire by organometallic …

In this work, we present a novel growth method to obtain high structural quality GaN films on
sapphire by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE). Our purpose is …

Nonpolar (11 2 0) a-plane GaN films have been grown by metal-organic vapor deposition on
r-plane (1 1 02) sapphire. Lateral growth is favored using a low V: III ratio resulting in films …