Compendium of natural hyperbolic materials
K Korzeb, M Gajc, DA Pawlak - Optics express, 2015 - opg.optica.org
Artificially structured hyperbolic metamaterials (HMMs)-uniaxial materials with opposite
signs of permittivity for ordinary and extraordinary waves-are one of the most attractive …
signs of permittivity for ordinary and extraordinary waves-are one of the most attractive …
Molecular beam epitaxy of layered group III metal chalcogenides on GaAs (001) substrates
SV Sorokin, PS Avdienko, IV Sedova, DA Kirilenko… - Materials, 2020 - mdpi.com
Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is
an inevitable step in realizing novel devices based on 2D materials and heterostructures …
an inevitable step in realizing novel devices based on 2D materials and heterostructures …
Barrier characteristics of Cd/p-GaTe Schottky diodes based on I–V–T measurements
The current–voltage (I–V) characteristics of Cd/p-GaTe Schottky barrier diodes were
measured in the temperature range 90–330 K. The apparent barrier height and the ideality …
measured in the temperature range 90–330 K. The apparent barrier height and the ideality …
Molecular beam epitaxy of two-dimensional GaTe nanostructures on GaAs (001) substrates: implication for near-infrared photodetection
Molecular beam epitaxy of two-dimensional (2D) GaTe nanostructures on GaAs (001)
substrates has been reported in this study. A trade-off between growth temperature and …
substrates has been reported in this study. A trade-off between growth temperature and …
Ab initio electronic band structure study of III–VI layered semiconductors
D Olguín, A Rubio-Ponce, A Cantarero - The European Physical Journal B, 2013 - Springer
We present a total energy study of the electronic properties of the rhombohedral γ-InSe,
hexagonal ε-GaSe, and monoclinic GaTe layered compounds. The calculations have been …
hexagonal ε-GaSe, and monoclinic GaTe layered compounds. The calculations have been …
Structure–Property Relationship of Low-Dimensional Layered GaSexTe1–x Alloys
We report the growth of layered GaSe x Te1–x mesostructures across the whole composition
range. For compositions up to x= 0.32 (the Te-rich region), mesocrystals form predominantly …
range. For compositions up to x= 0.32 (the Te-rich region), mesocrystals form predominantly …
Terahertz emission from layered GaTe crystal due to surface lattice reorganization and in-plane noncubic mobility anisotropy
In this work, a model based on the optical rectification effect and the photocurrent surge
effect is proposed to describe the terahertz emission mechanism of the layered GaTe crystal …
effect is proposed to describe the terahertz emission mechanism of the layered GaTe crystal …
Near band edge recombination mechanisms in GaTe
A Zubiaga, JA García, F Plazaola, V Muñoz-Sanjosé… - Physical Review B, 2003 - APS
GaTe samples of p-type have been investigated by analyzing the photoluminescence (PL)
response for different excitation intensities at energies higher than the band gap. The PL …
response for different excitation intensities at energies higher than the band gap. The PL …
Microhardness studies of GaTe whiskers
AG Kunjomana… - Crystal Research and …, 2005 - Wiley Online Library
Single crystal whiskers of gallium telluride (GaTe) have been grown by the physical vapour
deposition (PVD) method. Microindentation studies were carried out on the prism faces of …
deposition (PVD) method. Microindentation studies were carried out on the prism faces of …
Recombination processes in unintentionally doped GaTe single crystals
A Zubiaga, JA Garcıa, F Plazaola… - Journal of applied …, 2002 - pubs.aip.org
Emission spectra of GaTe single crystals in the range of 1.90–1.38 eV have been analyzed
at different temperatures and excitation intensities by photoluminescence …
at different temperatures and excitation intensities by photoluminescence …