This review focuses on theoretical foundations, experimental implementation and an
overview of experimental results of the thermoreflectance spectroscopy as a powerful …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

In the past few years, many groups have focused on the research and development of GaN-
based ultraviolet laser diodes (UV LDs). Great progresses have been achieved even though …

We present an investigation of the degradation of InGaN/GaN laser diodes grown on a GaN
substrate. The results indicate that:(i) Ageing induces a significant increase in the threshold …

We investigated the cavity facet degradation of unsealed GaN-based laser diodes (LDs). It
was found that the decrease of optical output power accompanied by undulation for …

In this paper, thermal properties of InGaN-based diode lasers are investigated. The
thermoreflectance technique was employed to study temperature distributions on the front …

In this paper accurate measurements of temperature distribution on the facet of GaN-based
diode lasers are presented as well as development of the instrumentation for high-resolution …

With this paper we propose a detailed study of the gradual degradation of InGaN-based
laser diodes and Light-Emitting Diodes submitted to electro-thermal stress. The two device …

Cathodoluminescence (CL) studies are widely applied in semi‐conductor science and
technology. However, for structures with ap‐n junction the CL spatial distribution can be …

Reduction of structural defects in GaN-based laser diodes is critically important for high-
efficiency and highly reliable performance. Therefore, it is very important to understand their …