Graphene nanoribbons (GNRs) are a good replacement material for silicon to overcome
short-channel effects in nanoscale devices. However, with continuous technology scaling …

In consideration of the difficulties related to interconnectivity and energy usage in binary
logic, designers have felt compelled to explore ternary logic as a viable alternative. The most …

Graphene nanoribbons (GNRs) are the most important emerging Graphene structures for
nanoelectronic and sensor applications. GNRs with perfect lattices have been extensively …

As silicon field-effect transistors encounter increasing scaling challenges, digital system
designers are shifting their attention towards multi-valued logic (MVL), specifically ternary …

The use of graphene nano-ribbon field-effect transistors (GNRFETs) in the nanoscale
circuits design is challenging because there are several adjustable parameters that need to …

In this paper, a novel structure for a dual-gated graphene nanoribbon field-effect transistor
(GNRFET) is offered, which combines the advantages of high and low dielectric constants. In …

Recently, Graphene Nanoribbon (GNR) based Field Effect Transistors (FET) have been
extensively investigated as a promising device to address problems in MOSFET while the …

The ambipolar behavior limits the performance of Schottky-barrier-type graphene
nanoribbon field-effect transistors (SB-GNRFETs). We propose an asymmetric gate (AG) …

With the evolution in the microelectronic applications like high speed processors, multimedia
and in current electronic communication for artificial intelligent devices and IOT necessitates …

In this paper, a compact SPICE model of flexible transition metal dichalcogenide field-effect
transistors (TMDFETs) is developed with considering effects when scaling the transistor size …