GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from
the high-frequency power amplifier to the high voltage devices used in power electronic …

The planar nature of the GaN heterojunction devices provides extended dimensions for
implementing monolithic power integrated circuits. This article presents a comprehensive …

In this letter, an enhancement-mode (E-mode) GaN p-channel field-effect transistors (p-
FETs) with current density of− 5.6 mA/mm and ratio of 10 6 was demonstrated on a p …

This article reports on the scaling of GaN complementary technology (CT) on a silicon
substrate to push its performance limits for circuit-level applications. The highly scaled self …

This letter demonstrates self-aligned-channel FinFETs based on a GaN-on-Si wafer. While
the self-aligned gate process helps to achieve shortest possible source-to-drain distance to …

This letter demonstrates Tungsten (W)-gated-channel GaN/AlGaN heterostructure field effect
transistors on a GaN-on-Si wafer grown by metal organic chemical vapor deposition …

In this letter, we report on demonstrating high-performance enhancement-mode (E-mode)-
channel GaN Fin Field-Effect Transistors (FinFETs) fabricated on a proposed …

We report enhancement-mode p-channel heterojunction field-effect transistors (HFETs)
without gate recess on a standard p-GaN/AlGaN/GaN high electron mobility transistor …

GaN-channel field-effect transistors (-FETs) are essential components for implementing the
energy-efficient complementary logic circuitry for monolithic GaN power integration. This …

In this work, we have demonstrated the Ni/Ag contacts on p-channel heterostructure field-
effect transistors (p-HFETs) based on the p-GaN/AlGaN/GaN/Si platform. Using an optimal …