Interplay between strain and size quantization in a class of topological insulators based on inverted-band semiconductors
A Khaetskii, V Golovach, A Kiefer - Physical Review B, 2024 - APS
We consider surface states in semiconductors with inverted-band structures, such as α-Sn
and HgTe. The main interest is the interplay of the effect of a strain of an arbitrary sign and …
and HgTe. The main interest is the interplay of the effect of a strain of an arbitrary sign and …
Quantum transport properties of the topological Dirac semimetal α-Sn
We report on measurements of the electrical resistivity (ρ) and thermoelectric power (S) in a
thin film of strained single-crystalline α-Sn grown by molecular beam epitaxy on an …
thin film of strained single-crystalline α-Sn grown by molecular beam epitaxy on an …