Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review

Z Ren, H Yu, Z Liu, D Wang, C Xing… - Journal of Physics D …, 2019 - iopscience.iop.org
III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as
promising candidates for energy-efficient, environment-friendly and robust UV lighting …

Perspectives on UVC LED: Its progress and application

TC Hsu, YT Teng, YW Yeh, X Fan, KH Chu, SH Lin… - Photonics, 2021 - mdpi.com
High-quality epitaxial layers are directly related to internal quantum efficiency. The methods
used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light …

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

J Li, N Gao, D Cai, W Lin, K Huang, S Li… - Light: Science & …, 2021 - nature.com
As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …

Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies

RK Mondal, S Adhikari, V Chatterjee, S Pal - Materials Research Bulletin, 2021 - Elsevier
The lighting industry undergoes a revolutionizing transformation with the introduction of III-
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …

On the origin of enhanced hole injection for AlGaN-based deep ultraviolet light-emitting diodes with AlN insertion layer in p-electron blocking layer

C Chu, K Tian, J Che, H Shao, J Kou, Y Zhang, Y Li… - Optics express, 2019 - opg.optica.org
For the [0001] oriented AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs), the
holes in the p-type electron blocking layer (p-EBL) are depleted due to the polarization …

[HTML][HTML] Review on the progress of AlGaN-based ultraviolet light-emitting diodes

Y Chen, J Ben, F Xu, J Li, Y Chen, X Sun, D Li - Fundamental Research, 2021 - Elsevier
AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV)
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …

A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM …

R Lin, Z Liu, P Han, R Lin, Y Lu, H Cao… - Journal of Materials …, 2022 - pubs.rsc.org
Aluminium gallium nitride (AlGaN)-based deep ultraviolet (DUV) light-emitting diodes
(LEDs) suffer from low internal quantum efficiency (IQE) and serious efficiency droop. One …

Quasi van der Waals epitaxy nitride materials and devices on two dimension materials

D Liang, T Wei, J Wang, J Li - Nano Energy, 2020 - Elsevier
In recent years, a novel epitaxial method based on Quasi-van der Waals (QvdW) force to
epitaxy three-dimensional (3D) nitride semiconductors on two-dimensional (2D) materials …

Nearly efficiency-droop-free AlGaN-based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high Mg doping …

ZH Zhang, SW Huang Chen, C Chu, K Tian… - Nanoscale research …, 2018 - Springer
This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting
diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a …

Research progress of AlGaN-based deep ultraviolet light-emitting diodes

R Xu, Q Kang, Y Zhang, X Zhang, Z Zhang - Micromachines, 2023 - mdpi.com
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) have great application
prospects in sterilization, UV phototherapy, biological monitoring and other aspects. Due to …