A few decades ago, the irradiation process was considered to be just a lethal technique that
damaged the structure of solid materials, but in the last few years, new discoveries have also …

Abstracte InGaN-based blue light-emitting diodes (LEDs), with their high efficiency and
brightness, are entering the display industry. However, a significant gap remains between …

Wide bandgap semiconductors promise devices with performances not achievable using
silicon technology. Among them, silicon carbide (SiC) is considered the top-notch material …

A superjunction (SJ) structure in power devices is compatible with low specific on-resistance
and high breakdown voltage. To fabricate the SJ structure in SiC power devices, the …

This study resumes the status of our knowledge about the formation of extended and
intrinsic defects in ion implanted 4H-SiC homo-epitaxial wafers during a high temperature …

UV–visible absorption and Raman scattering spectroscopy were used to investigate the
effects of 4 MeV Xe-ion and 4 MeV Au-ion irradiations on α-SiC single crystals. The …

Ionizing events can lead to panoply of irradiation effects, and in silicon carbide (SiC), they
drastically modify the defect production rate or the initial density. To better understand this …

Understanding response of solids to particle irradiation remains a major materials physics
challenge. This applies even to SiC, which is a prototypical nuclear ceramic and wide-band …

Above room temperature, the buildup of radiation damage in SiC is a dynamic process
governed by the mobility and interaction of ballistically generated point defects. Here, we …

In this work, a single crystal of 4H–SiC was subjected to phosphorus irradiation at 100 keV
with four different fluences at room temperature (RT) and post-irradiation annealing …