The NH/sub 3/-plasma passivation has been performed on polycrystalline silicon (poly-Si)
thin-film transistors (TFT's), It is found that the TFT's after the NH/sub 3/-plasma passivation …

We studied the impact of grain boundary (GB) protrusion on the electrical properties of low
temperature polycrystalline silicon thin film transistors. The analysis of atomic force …

The degradation of n-type and p-type low-temperature polycrystalline silicon (poly-Si) thin-
film transistors (TFTs) due to hot-carrier stress was investigated by capacitance-voltage (CV) …

In this letter, we present experimental data showing that hot-carrier stress in laser annealed
polycrystalline silicon thin-film transistors provokes an anomalous turn-on voltage variation …

A systematic study of the noise performances of polycrystalline silicon thin film transistors is
presented. The drain current spectral density of these devices shows an evident 1/f behavior …

Thin film transistors have become crucial components of several electronic display devices.
However, high leakage current is a frustrating impediment to increasing the efficiency of …

The NH 3 plasma passivation has been performed for the first time on the polycrystalline
silicon (poly-Si) thin-film transistors (TFT's). It is found that the TFT's after the NH 3 plasma …

This paper systematically studies high-current-induced effects, hot-carrier effects, and self-
heating effects in flexible low-temperature polycrystalline-silicon thin-film transistors …

The effects of low gate voltage| V/sub g/| stress (V/sub g/=-2.5 V, V/sub d/=-12 V) and high
gate voltage| V/sub g/| stress (V/sub g/= V/sub d/=-12 V) on the stability of short p-channel …

The thermal generation component of polycrystalline silicon TFTs off-current is analysed
experimentally and theoretically. In order to minimize the field-enhanced component of the …