Single event soft error in advanced integrated circuit
Y Zhao, S Yue, X Zhao, S Lu, Q Bian… - Journal of …, 2015 - iopscience.iop.org
As technology feature size decreases, single event upset (SEU), and single event transient
(SET) dominate the radiation response of microcircuits. Multiple bit upset (MBU)(or multi cell …
(SET) dominate the radiation response of microcircuits. Multiple bit upset (MBU)(or multi cell …
Radiation-aware analog circuit design via fully-automated simulation environment
As a result of increased interest in space applications, radiation-aware circuit design has
become a major concern to guarantee the safe operation of electronic systems operating …
become a major concern to guarantee the safe operation of electronic systems operating …
Characterizing, modeling, and analyzing soft error propagation in asynchronous and synchronous digital circuits
Soft errors, due to cosmic radiations, are one of the major challenges for reliable VLSI
designs. In this paper, we present a symbolic framework to model soft errors in both …
designs. In this paper, we present a symbolic framework to model soft errors in both …
Characterization and modeling of Single Event Transient propagation through standard combinational cells
M Andjelkovic, M Krstic - Microelectronics Reliability, 2023 - Elsevier
Abstract Analysis of Single Event Transient (SET) effects is an important step in the design of
radiation-hardened integrated circuits for space missions. Because the simulation of SET …
radiation-hardened integrated circuits for space missions. Because the simulation of SET …
A methodology for characterization, modeling and mitigation of single event transient effects in CMOS standard combinational cells
M Andjelkovic - 2021 - publishup.uni-potsdam.de
With the downscaling of CMOS technologies, the radiation-induced Single Event Transient
(SET) effects in combinational logic have become a critical reliability issue for modern …
(SET) effects in combinational logic have become a critical reliability issue for modern …
Model and analysis of single event transient sensitivity based on uncertainty quantification
B Liu, L Cai - Microprocessors and Microsystems, 2022 - Elsevier
Since there are many uncertain factors in the generation and propagation of single event
transient (SET), it is a very important issue that how to quantify the impact of these uncertain …
transient (SET), it is a very important issue that how to quantify the impact of these uncertain …
Modeling, analyzing, and abstracting single event transient propagation at gate level
Soft errors have become one of the most challenging issues that impact the reliability of
modern microelectronic systems at terrestrial altitudes. A new methodology to abstract …
modern microelectronic systems at terrestrial altitudes. A new methodology to abstract …
Abstracting single event transient characteristics variations due to input patterns and fan-out
Due to shrinking feature sizes and significant reduction in noise margins, as CMOS
technologies evolve toward ultra-deep sub-micron, digital circuits have become more …
technologies evolve toward ultra-deep sub-micron, digital circuits have become more …
Single Event Transient Study of pMOS Transistors in 65 nm Technology With and Without a Deep n+ Well Under Particle Striking
J Zhang, L Fang, J Chen, S Hou, X Tong - IEEE Access, 2019 - ieeexplore.ieee.org
In triple-well PMOSFET transistor, a deep n+ well (DNW) is a process used to isolate the
substrate noise, which can lead to changes in effect of single event transient (SET). In outer …
substrate noise, which can lead to changes in effect of single event transient (SET). In outer …
A Holistic Approach for Characterization of SET Effects in a Standard Digital Cell Library
M Andjelkovic, M Krstic - 2024 IEEE 15th Latin America …, 2024 - ieeexplore.ieee.org
This work introduces a framework for the gate-level characterization and modeling of Single
Event Transient (SET) generation and propagation effects in CMOS standard combinational …
Event Transient (SET) generation and propagation effects in CMOS standard combinational …