Single event soft error in advanced integrated circuit

Y Zhao, S Yue, X Zhao, S Lu, Q Bian… - Journal of …, 2015 - iopscience.iop.org
As technology feature size decreases, single event upset (SEU), and single event transient
(SET) dominate the radiation response of microcircuits. Multiple bit upset (MBU)(or multi cell …

Radiation-aware analog circuit design via fully-automated simulation environment

OY Muhikanci, K Ozanoglu, E Afacan, MB Yelten… - Integration, 2023 - Elsevier
As a result of increased interest in space applications, radiation-aware circuit design has
become a major concern to guarantee the safe operation of electronic systems operating …

Characterizing, modeling, and analyzing soft error propagation in asynchronous and synchronous digital circuits

GB Hamad, SR Hasan, OA Mohamed… - Microelectronics …, 2015 - Elsevier
Soft errors, due to cosmic radiations, are one of the major challenges for reliable VLSI
designs. In this paper, we present a symbolic framework to model soft errors in both …

Characterization and modeling of Single Event Transient propagation through standard combinational cells

M Andjelkovic, M Krstic - Microelectronics Reliability, 2023 - Elsevier
Abstract Analysis of Single Event Transient (SET) effects is an important step in the design of
radiation-hardened integrated circuits for space missions. Because the simulation of SET …

A methodology for characterization, modeling and mitigation of single event transient effects in CMOS standard combinational cells

M Andjelkovic - 2021 - publishup.uni-potsdam.de
With the downscaling of CMOS technologies, the radiation-induced Single Event Transient
(SET) effects in combinational logic have become a critical reliability issue for modern …

Model and analysis of single event transient sensitivity based on uncertainty quantification

B Liu, L Cai - Microprocessors and Microsystems, 2022 - Elsevier
Since there are many uncertain factors in the generation and propagation of single event
transient (SET), it is a very important issue that how to quantify the impact of these uncertain …

Modeling, analyzing, and abstracting single event transient propagation at gate level

GB Hamad, SR Hasan, OA Mohamed… - 2014 IEEE 57th …, 2014 - ieeexplore.ieee.org
Soft errors have become one of the most challenging issues that impact the reliability of
modern microelectronic systems at terrestrial altitudes. A new methodology to abstract …

Abstracting single event transient characteristics variations due to input patterns and fan-out

GB Hamad, SR Hasan, OA Mohamed… - … Symposium on Circuits …, 2014 - ieeexplore.ieee.org
Due to shrinking feature sizes and significant reduction in noise margins, as CMOS
technologies evolve toward ultra-deep sub-micron, digital circuits have become more …

Single Event Transient Study of pMOS Transistors in 65 nm Technology With and Without a Deep n+ Well Under Particle Striking

J Zhang, L Fang, J Chen, S Hou, X Tong - IEEE Access, 2019 - ieeexplore.ieee.org
In triple-well PMOSFET transistor, a deep n+ well (DNW) is a process used to isolate the
substrate noise, which can lead to changes in effect of single event transient (SET). In outer …

A Holistic Approach for Characterization of SET Effects in a Standard Digital Cell Library

M Andjelkovic, M Krstic - 2024 IEEE 15th Latin America …, 2024 - ieeexplore.ieee.org
This work introduces a framework for the gate-level characterization and modeling of Single
Event Transient (SET) generation and propagation effects in CMOS standard combinational …