Recent growth of power semiconductor device market has been driven largely by the
growing demand for an efficient way to convert and distribute energy in the field of …

Online junction temperature (T j) measurement enables robust power converter operations
by providing overtemperature protection and condition monitoring of the power devices. For …

The temperature-sensitive electrical parameters (TSEPs) have been used in silicon carbide
(SiC) MOSFETS junction temperature measurement for over-temperature protection and …

Insulated gate bipolar transistor (IGBT) junction temperature monitoring is crucial for
converter's healthy management and condition monitoring. However, most conventional …

The complete replacement of silicon devices with silicon carbide (SiC) devices still faces
many reliability challenges considering higher cost, higher junction temperature, and its …

Temperature sensitive electrical parameters (TSEPs) are promising for measurement of the
insulated gate bipolar transistor (IGBT) junction temperature. Many TSEPs have been …

AC power cycling tests allow the most realistic reliability assessment by applying close to
real stress to the device or module under test to meet functional safety standards, which is …

Fast and accurate online monitoring of junction temperature of insulated gate bipolar
transistor (IGBT) chips is of great significance for overtemperature protection and thermal …

The insulated-gate bipolar transistor (IGBT) junction temperature is crucial for condition
monitoring, reliability assessment, and health management. However, the existing IGBT …

Despite that many temperature-sensitive electrical parameters (TSEPs) have been
discovered for the online estimation of the junction temperature of IGBT devices, their wide …