In this paper the fundamental concept of ring amplification is introduced and explored. Ring
amplifiers enable efficient amplification in scaled environments, and possess the benefits of …

In this paper, a fin-shaped field effect transistor (FinFET) structure which uses ground plane
concept is proposed and theoretically investigated. The ground plane reduces the coupling …

We report on the thermal failure of fin-shaped field-effect transistor (FinFET) devices under
the normal operating condition. Pre-and post failure characteristics are investigated. A …

A methodology for fast and accurate thermal simulation of integrated circuits (ICs) is
presented based on a multiblock reduced order modeling approach. The model projects the …

An approach is proposed to project thermal behavior in a semiconductor integrated-circuit
structure onto a functional space based on the proper orthogonal decomposition (POD). The …

A novel drain-extended FinFET device is proposed in this letter for high-voltage and high-
speed applications. A 2× better R ON versus V BD tradeoff is shown from technology …

For the first time, a novel drain-extended tunnel FET (DeTFET) device is disclosed in this
paper, while addressing the need for high-voltage/high-power devices for system-on-chip …

This paper presents a physics-based semiempirical model of drain saturation voltage (V DS,
SAT) of a FinFET device suitable for analog circuit design. The previous belief of similarity of …

Analog and RF characteristics of power FinFET transistors with different drain-extension
structures are investigated for microwave integrated circuit applications. The power FinFETs …

Most today's students are comfortable and proficient in searching information using network-
based electronic tools. Yet, our experience led us to believe that the majority of these …