GaAsBi has been researched as a candidate material for optoelectronic devices for around
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …

Strained-layer quantum wells have revolutionized the performance of near-infrared diode
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …

In this work, we demonstrate the MBE growth of a systematic series of GaAsBi/GaAs multiple
quantum well devices with up to 120 periods and report on their structural and optical …

GaAs 1− x Bi x was grown on GaAs and InGaAs underlayers to determine the effect of global
strain on bismuth (Bi) incorporation. Reducing compressive strain aids in Bi incorporation …

Films of n-GaAs 1-x Bi x films were grown via molecular beam epitaxy using both Si and Te
as dopant sources. Electron mobility was characterized by Hall effect measurements as a …

This paper investigates the photovoltaic performance enhancement of our proposed p-
GaAsP/i-GaAs/n-GaAsP solar cell by varying the thickness of the intrinsic layer in the range …

To push beyond the present limitations on space exploration, researchers must develop
long-lasting, lightweight, and efficient energy sources to support long-term missions and in …

서도 투명한 터치스크린을 구현하여 실용화에 대한 가능성을 보여주었고 이의 파급효과로,
Samsung, Sony 등의 굴지의 글로벌 대기업에서도 고품질 그래핀의 대량 생산을 위한 진보적 …

김홍혁 박사는 2020 년 1 월에 University of Wisconsin-Madison 에서 박사학위를 받았으며,
Lawrence Berkeley National Laboratory 와 Northwestern University 에서 박사후과정을 …

Molecular beam epitaxy is a technique that can be used to deposit thin films of materials
onto a heated substrate inside a vacuum chamber. A large variety of elements are …